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Applied Physics Letters / Volume 96 / Issue 26 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 261903 (2010); http://dx.doi.org/10.1063/1.3458864 (3 pages)

In situ evolution of stress gradients in Cu films induced by capping layers

Conal E. Murray1, Paul R. Besser2, Christian Witt3, and Michael Toney4

1IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
2Formerly of Advanced Micro Devices, Sunnyvale, California 94088, USA
3GLOBALFOUNRDIRES Inc., Watson Research Center, Yorktown Heights, New York 10598, USA
4Stanford Synchrotron Radiation Lightsource, Menlo Park, California 94025, USA

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(Received 20 May 2010; accepted 9 June 2010; published online 29 June 2010)

Depth-dependent stress distributions within copper films possessing capping layers were measured during in situ thermal anneals. Glancing-incidence x-ray diffraction measurements of SiCxNyHz capped Cu films revealed that a strain gradient near the cap/Cu interface, created by constraint imposed by the cap during its deposition process, decreased as the sample temperature increased to 350 °C. Although the increase in sample temperature allowed Cu to approach its equilibrium lattice spacing at the cap deposition temperature and minimize the corresponding stress gradient, both the gradient and concomitant increase in residual bulk stress of the Cu film reappeared after cooling to room temperature.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

copper, internal stresses, metallic thin films, metallisation, X-ray diffraction

PACS

  • 85.40.Ls

    Metallization, contacts, interconnects; device isolation

  • 68.60.-p

    Physical properties of thin films, nonelectronic

  • 68.55.at

    Other materials

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458864

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. E. Murray, P. R. Besser, C. Witt, and J. L. Jordan-Sweet, Appl. Phys. Lett. 93, 221901 (2008)APPLAB000093000022221901000001.

    M. F. Toney and S. Brennan, Phys. Rev. B 39, 7963 (1989).

    C. J. Shute and J. B. Cohen, J. Appl. Phys. 70, 2104 (1991)JAPIAU000070000004002104000001.


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