Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

Le, Son T.; Jannaty, P.; Zaslavsky, A.; Dayeh, S. A.; Picraux, S. T.

doi:doi:10.1063/1.3457862

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Band offsets at Sb2S3/Cu(In,Ga)Se2 heterojunctions have been studied by x-ray and ultraviolet photoemission spectroscopy. The valence and conduction band offset have been estimated to −(0.6±0.3) eV and (0.2±0.3) eV, respectively. This result suggests Sb2S3 as a potential buffer layer material for chalcopyrite based solar cells. However, Cu(In,Ga)Se2/Sb2S3/ZnO solar cells have been investigated. While the open circuit voltage ranged up to ∼ 0.4–0.5 V, the short circuit current was limited to ∼...

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We report on vapor-liquid-solid growth and electrical properties of axial in situ doped p-n junction Ge sub-100 nm diameter nanowires. Room temperature four-point measurements show current rectification of two to three orders of magnitude depending on nanowire doping and diameter. We observe strong backgate control of reverse-bias current of up to three orders of magnitude and explain it by band-to-band tunneling modulated by the backgate-controlled electric field, as confirmed qualitatively via a quasi-three-dimensional Schrödinger–Poisson simulation.

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KEYWORDS and PACS

Keywords

elemental semiconductors, germanium, nanowires, p-n junctions, Poisson equation, rectification, Schrodinger equation, semiconductor doping, semiconductor quantum wires

PACS

68.65.La

Quantum wires (patterned in quantum wells)
81.07.Gf

Nanowires
61.72.U-

Doping and impurity implantation
85.40.Ry

Impurity doping, diffusion and ion implantation technology
73.40.Lq

Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3457862

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

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