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Appl. Phys. Lett. 96, 262103 (2010); http://dx.doi.org/10.1063/1.3457920 (3 pages)

High thermoelectric power factor in Fe-substituted Mo3Sb7

C. Candolfi1, B. Lenoir1, A. Dauscher1, B. Malaman1, E. Guilmeau2, J. Hejtmanek3, and J. Tobola4

1Institut Jean Lamour, Ecole Nationale Supérieure des Mines de Nancy, UMR 7198 CNRS-Nancy Université-UPVM, Parc de Saurupt, 54042 Nancy Cedex, France
2CRISMAT-ENSICAEN, UMR 6508, 6 Bd Maréchal Juin, 14050, Caen Cedex, France
3Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, CZ-162 53, Praha 6, Czech Republic
4Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, 30-059 Krakow, Poland

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(Received 16 March 2010; accepted 26 May 2010; published online 28 June 2010)

Thermoelectric properties of the Mo2.57Fe0.43Sb7 compound, a ternary derivative of Mo3Sb7, are reported from 2 up to 1000 K. Even though Fe substitution keeps low electrical resistivity values, high thermopower values are achieved at high temperatures. Electronic band structure calculations show that the high thermopower observed arises from the beneficial influence of iron d-states contribution to the density of states at the Fermi level. A high power factor similar to those of the best state-of-the-art thermoelectric materials emerges which, coupled with magnetic excitations that help to keep very low thermal conductivity values, leads to a dimensionless thermoelectric figure of merit of 0.55 at 1000 K.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 72.15.Jf

    Thermoelectric and thermomagnetic effects

  • 71.20.-b

    Electron density of states and band structure of crystalline solids

  • 72.15.Eb

    Electrical and thermal conduction in crystalline metals and alloys

  • 82.30.Hk

    Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    E. Skoug, C. Zhou, Y. Pei, and D. T. Morelli, Appl. Phys. Lett. 94, 022115 (2009)APPLAB000094000002022115000001.

    C. Candolfi, B. Lenoir, A. Dauscher, J. Hejtmanek, and J. Tobola, Phys. Rev. B 80, 155127 (2009), and references therein.

    H. Xu, K. M. Kleinke, T. Holgate, H. Zhang, Z. Su, T. M. Tritt, and H. Kleinke, J. Appl. Phys. 105, 053703 (2009)JAPIAU000105000005053703000001.

    V. H. Tran, W. Miiller, and Z. Bukowski, Phys. Rev. Lett. 100, 137004 (2008).


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