Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

Chen, Yu-Chun; Chang, Ting-Chang; Li, Hung-Wei; Chen, Shih-Ching; Lu, Jin; Chung, Wan-Fang; Tai, Ya-Hsiang; Tseng, Tseung-Yuen

doi:doi:10.1063/1.3457996

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This study investigates the effects of bias-induced oxygen adsorption on the electrical characteristic instability of zinc tin oxide thin film transistors in different ambient oxygen partial pressures. When oxygen pressure is largest, the threshold voltages showed the quickest increase but the slowest recovery during the stress phase and recovery phase, respectively. This finding corresponds to the charge trapping time constant and recovery time constant, which are extracted by fitting the stretched-exponential equation and which exhibit a relationship with oxygen pressure. We suggest that the gate bias reduces the activation energy of oxygen adsorption during gate bias stress.

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KEYWORDS and PACS

Keywords

adsorption, semiconductor thin films, thin film transistors, tin compounds, zinc compounds

PACS

85.30.Tv

Field effect devices
68.55.ag

Semiconductors

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3457996

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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