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Applied Physics Letters / Volume 96 / Issue 26 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 262105 (2010); http://dx.doi.org/10.1063/1.3455072 (3 pages)

Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

Mutsumi Kimura1, Toshio Kamiya2, Takashi Nakanishi1, Kenji Nomura3, and Hideo Hosono2,3

1Department of Electronics and Informatics, Ryukoku University, Otsu 520-2194, Japan
2Materials and Structures Laboratory, Tokyo Institute of Technology, Midori, Yokohama 226-8503, Japan
3Frontier Research Center, Tokyo Institute of Technology, Midori, Yokohama 226-8503, Japan

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(Received 14 April 2010; accepted 27 May 2010; published online 29 June 2010)

Amorphous In–Ga–Zn–O (α-IGZO) is expected for thin-film transistors (TFTs) in next-generation flat-panel displays but its intrinsic properties are not understood well and different mobility models have been applied to different films. This letter reports that a universal mobility model is obtained using a field-effect technique and capacitance-voltage method. Electrical characteristics of α-IGZO TFTs subjected to different annealing are reproduced using the mobility model and different trap densities. The present achievement will be a necessary basis to establish device and circuit simulators for α-IGZO-based electronic applications.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous semiconductors, carrier mobility, field effect transistors, gallium compounds, II-VI semiconductors, indium compounds, semiconductor thin films, thin film transistors, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3455072

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. -J. Liu, H. -W. Fang, S. -H. Su, C. -H. Li, J. -S. Cherng, J. -H. Hsieh, and J. -Y. Juang, Appl. Phys. Lett. 94, 092504 (2009)APPLAB000094000009092504000001.

    G. H. Kim, B. D. Ahn, H. S. Shin, W. H. Jeong, H. J. Kim, and H. J. Kim, Appl. Phys. Lett. 94, 233501 (2009)APPLAB000094000023233501000001.

    T. Kamiya, K. Nomura, and H. Hosono, Appl. Phys. Lett. 96, 122103 (2010)APPLAB000096000012122103000001.

    K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 192107 (2008)APPLAB000093000019192107000001.

    M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono, Appl. Phys. Lett. 92, 133512 (2008)APPLAB000092000013133512000001.

    K. Jeon, C. Kim, I. Song, J. Park, S. Kim, S. Kim, Y. Park, J. -H. Park, S. Lee, D. M. Kim, and D. H. Kim, Appl. Phys. Lett. 93, 182102 (2008)APPLAB000093000018182102000001.

    K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 95, 013502 (2009)APPLAB000095000001013502000001.


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