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Applied Physics Letters / Volume 96 / Issue 26 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 262106 (2010); http://dx.doi.org/10.1063/1.3457449 (3 pages)

Evidence for surface states in a single 3 nm diameter Co3O4 nanowire

Yi Sun1, Ji-Yong Yang1, Rui Xu1, Lin He1,2, Rui-Fen Dou1, and Jia-Cai Nie1

1Department of Physics, Beijing Normal University, 100875 Beijing, People's Republic of China
2Department of Physics, Peking University, 100871 Beijing, People's Republic of China

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(Received 23 March 2010; accepted 4 June 2010; published online 29 June 2010)

The electronic local density of states of a single Co3O4 semiconductor nanowire with the diameter of 3 nm is explored using low-temperature scanning tunneling microscopy and spectroscopy. The energy gap between the conduction band and valence band of the nanowire is about 1.7 eV, which is slightly enhanced compared to the bulk value, ∼ 1.5 eV, due to the quantum confinement effect. Two surface states are observed locating near the Fermi level in the band gap.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cobalt compounds, electronic density of states, energy gap, Fermi level, nanowires, scanning tunnelling microscopy, scanning tunnelling spectroscopy, semiconductor quantum wires, surface states, valence bands

PACS

  • 68.65.La

    Quantum wires (patterned in quantum wells)

  • 81.07.Gf

    Nanowires

  • 81.07.Vb

    Quantum wires

  • 73.20.-r

    Electron states at surfaces and interfaces

  • 68.37.Ef

    Scanning tunneling microscopy (including chemistry induced with STM)

  • 71.20.-b

    Electron density of states and band structure of crystalline solids

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457449

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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