Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory

Lu, Jin; Chang, Ting-Chang; Chen, Yu-Ting; Huang, Jheng-Jie; Yang, Po-Chun; Chen, Shih-Ching; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Shi, Yi; Chu, Ann-Kuo

doi:doi:10.1063/1.3457870

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Evidence for surface states in a single 3 nm diameter Co₃O₄ nanowire

The electronic local density of states of a single Co3O4 semiconductor nanowire with the diameter of 3 nm is explored using low-temperature scanning tunneling microscopy and spectroscopy. The energy gap between the conduction band and valence band of the nanowire is about 1.7 eV, which is slightly enhanced compared to the bulk value, ∼ 1.5 eV, due to the quantum confinement effect. Two surface states are observed locating near the Fermi level in the band gap.

Photoexcited charge current for the presence of pure spin current

The asymmetric spin distribution in k space caused by the pure spin current (PSC) can introduce a photoexcited charge current (PECC). This provides us a practical scheme for direct detection of PSC. We demonstrate theoretically that the PECC related to the PSC depends sensitively on the wave vector and spin orientation of the carriers, more important, the helicity dependence of this PECC provides us a way to refine it from the helicity independent background current by tuning the polarized lase...

The NiSi₂/SiN_x compound nanocrystals (CNCs) were fabricated to integrate the compound tunnel barrier into nanocrystal memory, with the inclusion of nitride traps. The analysis of high resolution transmission electron microscopy and x-ray photoelectron spectroscopy reveal that the nanocrystal is mainly composed of NiSi₂ and silicon nitride with small size of 4–5 nm and high density of ∼ 1×10¹² cm⁻². The charge storage characteristics of the memory capacitor based on NiSi₂/SiN_x CNCs were investigated by capacitance-voltage measurement and the enhanced retention characteristics, which remain 71.7% ( ∼ 1.9 V) in 10⁴ s, are clarified to be due to the compound tunnel barrier and traps in nitride.

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KEYWORDS and PACS

Keywords

capacitor storage, nanofabrication, nanostructured materials, nickel alloys, silicon alloys, silicon compounds, transmission electron microscopy, X-ray photoelectron spectra

PACS

84.32.Tt

Capacitors
84.30.Sk

Pulse and digital circuits
84.60.Ve

Energy storage systems, including capacitor banks

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3457870

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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