The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

Park, Joon Seok; Kim, Tae Sang; Son, Kyoung Seok; Lee, Kwang-Hee; Maeng, Wan-Joo; Kim, Hyun-Suk; Kim, Eok Su; Park, Kyung-Bae; Seon, Jong-Baek; Choi, Woong; Ryu, Myung Kwan; Lee, Sang Yoon

doi:doi:10.1063/1.3435482

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Photoexcited charge current for the presence of pure spin current

The asymmetric spin distribution in k space caused by the pure spin current (PSC) can introduce a photoexcited charge current (PECC). This provides us a practical scheme for direct detection of PSC. We demonstrate theoretically that the PECC related to the PSC depends sensitively on the wave vector and spin orientation of the carriers, more important, the helicity dependence of this PECC provides us a way to refine it from the helicity independent background current by tuning the polarized lase...

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 102 with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated throug...

The stability of hafnium indium zinc oxide thin film transistors under negative bias stress with simultaneous exposure to white light was evaluated. Two different inverted staggered bottom gate devices, each with a silicon oxide and a silicon nitride passivation, were compared. The latter exhibits higher field effect mobility but inferior subthreshold swing, and undergoes more severe shifts in threshold voltage (V_T) during negative bias illumination stress. The time evolution of V_T fits the stretched exponential equation, which implies that hydrogen incorporation during the nitride growth has generated bulk defects within the semiconductor and/or at the semiconductor/gate dielectric interface.

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KEYWORDS and PACS

Keywords

hafnium compounds, indium compounds, lighting, passivation, semiconductor growth, thin film transistors, zinc compounds

PACS

85.30.Tv

Field effect devices
85.40.-e

Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.05.-t

Specific materials: fabrication, treatment, testing, and analysis
42.72.-g

Optical sources and standards

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3435482

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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