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Applied Physics Letters / Volume 96 / Issue 26 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 262110 (2010); http://dx.doi.org/10.1063/1.3456379 (3 pages)

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Min-Chen Chen1, Ting-Chang Chang1,2, Chih-Tsung Tsai1, Sheng-Yao Huang1, Shih-Ching Chen1, Chih-Wei Hu3, Simon M. Sze3, and Ming-Jinn Tsai4

1Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
2Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
3Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan
4Electronics and Opto-electronics Research Laboratories, Industrial Technology Research Institute, Hsinchu 300, Taiwan

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(Received 25 February 2010; accepted 30 May 2010; published online 29 June 2010)

The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 102 with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electric resistance, electrochemical electrodes, gallium compounds, indium compounds, MIS structures, platinum, point contacts, random-access storage, semiconductor storage, semiconductor thin films, titanium, titanium compounds, zinc compounds

PACS

  • 85.30.Hi

    Surface barrier, boundary, and point contact devices

  • 73.40.Qv

    Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3456379

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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