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Applied Physics Letters / Volume 96 / Issue 26 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 262111 (2010); http://dx.doi.org/10.1063/1.3459966 (3 pages)

Crystallographic orientation engineering in silicon-on-insulator substrates

T. Signamarcheix1, B. Biasse1, A.-M. Papon1, E. Nolot1, F. Mazen1, J. Leveneur1, O. Faynot1, L. Clavelier1, and B. Ghyselen2

1CEA, LETI, MINATEC, 38054 Grenoble Cedex 9, France
2SOITEC, Parc technologique des Fontaines, Bernin 38926 Crolles Cedex, France

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(Received 24 March 2010; accepted 14 June 2010; published online 1 July 2010)

A bilayer silicon-on-insulator film was engineered to locally convert the crystallographic orientation from (100) to (110). The initial bilayer film is composed of a first 50 nm thick (110) oriented Si surface layer, above a second 20 nm thick (100) oriented Si underlayer. The bilayer film was elaborated using hydrophobic bonding to ensure an atomic contact between the two layers without any intermediate oxide. A local and deep-amorphization was developed by ion implantation to amorphize the (100) oriented Si underlayer, conserving also a partially crystalline (110) oriented surface layer. After such a deep amorphization, a solid phase epitaxy regrowth was performed at 900 °C. Transmission electron microscopy observations confirm that the partially crystalline surface layer acts as a seed for the epitaxial regrowth of the amorphized areas through the hydrophobic bonding interface. Thus, the orientation is locally converted from (100) to (110) in the underlayer, which could lead to the elaboration of hybrid films over a continuous insulating oxide that are mandatory for high performance electronic devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphisation, crystal orientation, elemental semiconductors, epitaxial growth, hydrophobicity, ion implantation, silicon-on-insulator, transmission electron microscopy

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3459966

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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