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Applied Physics Letters / Volume 96 / Issue 26 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 262112 (2010); http://dx.doi.org/10.1063/1.3458827 (3 pages)

Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization

Jun Xia and Andreas Mandelis

Department of Mechanical and Industrial Engineering, Center for Advanced Diffusion-Wave Technologies (CADIFT), University of Toronto, Toronto, Ontario M5S 3G8, Canada

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(Received 11 March 2010; accepted 5 June 2010; published online 1 July 2010)

A method for resolving highly overlapped defects in rate-window analysis is proposed. This method offers high defect-state characterization reliability because it is based on direct multiparameter fitting of deep level photothermal spectra using combined temperature and frequency scans. Two direct search optimization algorithms are utilized as follows: the genetic algorithm for a search of possible solution areas and the pattern search algorithm for a refined search of global minimum. Four defect levels are identified using this technique.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

deep level transient spectroscopy, deep levels, defect states, photothermal spectroscopy, reliability

PACS

  • 79.10.Ca

    Deep-level photothermal spectroscopy

  • 07.60.-j

    Optical instruments and equipment

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458827

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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