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Applied Physics Letters / Volume 96 / Issue 26 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 262113 (2010); http://dx.doi.org/10.1063/1.3460141 (3 pages)

Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures

Jinsik Choi, Jin-Soo Kim, Inrok Hwang, Sahwan Hong, Ik-Su Byun, Seung-Woong Lee, Sung-Oong Kang, and Bae Ho Park

Department of Physics, Division of Quantum Phases and Devices, Konkuk University, Seoul 143-701, Republic of Korea

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(Received 8 September 2009; accepted 9 June 2010; published online 2 July 2010)

We found different nonvolatile memory effects between ferroelectric and resistive switching in Pt/PbZr0.3Ti0.7O3(PZT)/La0.5Sr0.5CoO3 (LSCO) heterostructures, depending on thickness of epitaxial PZT films. As the film thickness decreased below 34 nm, leakage and/or tunneling currents increased and hindered ferroelectric switching of films; alternatively, bipolar resistive switching was observed. Analysis using fitting plot on resistive switching behaviors suggested that variable Schottky barrier at the interface between Pt electrode and the film may be responsible for the different nonvolatile memory switching.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

epitaxial layers, ferroelectric storage, ferroelectric switching, ferroelectric thin films, lanthanum compounds, lead compounds, platinum, random-access storage, Schottky barriers, strontium compounds

PACS

  • 85.50.Gk

    Non-volatile ferroelectric memories

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 84.30.Sk

    Pulse and digital circuits

  • 77.80.Fm

    Switching phenomena

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3460141

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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