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Appl. Phys. Lett. 96, 262501 (2010); http://dx.doi.org/10.1063/1.3457475 (3 pages)

Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes

H. Kurt1, K. Rode1, K. Oguz1, M. Boese2, C. C. Faulkner2, and J. M. D. Coey1

1School of Physics and CRANN, Trinity College, Dublin 2, Ireland
2Advanced Microscopy Laboratory, CRANN, Trinity College, Dublin 2, Ireland

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(Received 28 May 2010; accepted 4 June 2010; published online 28 June 2010)

Boron diffusion out of the CoFeB layers in model systems with thick CoFeB and MgO layers grown by radiofrequency sputtering or electron-beam evaporation and in MgO-based magnetic tunnel junctions (MTJs) is probed after annealing by x-ray photoemission spectroscopy (XPS) and electron energy loss spectroscopy. Successive interfaces are exposed by ion milling the stacks, layer by layer, in the XPS system. Despite the presence of thick CoFeB and a high annealing temperature of 400 °C, we found no boron in the MgO or at the MgO/CoFe interfaces. Similar results are also obtained in the MTJs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 81.15.Cd

    Deposition by sputtering

  • 81.15.Dj

    E-beam and hot filament evaporation deposition

  • 75.70.Cn

    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

  • 75.47.De

    Giant magnetoresistance

  • 81.40.Gh

    Other heat and thermomechanical treatments

  • 82.80.Pv

    Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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