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Applied Physics Letters / Volume 96 / Issue 26 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 96, 262503 (2010); http://dx.doi.org/10.1063/1.3447797 (3 pages)

Interfacial barrier in manganite junctions with different crystallographic orientations

W. W. Gao, A. D. Wei, J. R. Sun, D. S. Shang, J. Wang, T. Y. Zhao, and B. G. Shen

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

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(Received 9 April 2010; accepted 18 May 2010; published online 28 June 2010)

We performed a comprehensive study on the La1−xCaxMnO3/SrTiO3:Nb junctions with different hole content and film thickness. It is found that the interfacial barrier, which determines the physical properties of the junctions, shows a strong dependence on crystallographic orientation, and it is substantially higher for the (110) than for the (100)-orientated junctions. The difference in barrier height is further found to exhibit a systematic variation with Ca content and film thickness (t). It reduces from ∼ 0.09 to 0.02 eV for a x increase from 0.1 to 1 with a fixed t = 200 nm, and experiences a growth by ∼ 0.06 eV corresponding to the variation in t from 10 to 160 nm for a constant x = 0.33. Similar phenomena have been observed in the La0.67Ba0.33MnO3/SrTiO3:Nb junctions. In the scenario of different polarity mismatches at the (100) and (110) interfaces in the two series of junctions, these results can be qualitatively understood.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

barium compounds, calcium compounds, hole traps, interface states, interface structure, lanthanum compounds, niobium, strontium compounds

PACS

  • 73.20.-r

    Electron states at surfaces and interfaces

  • 68.35.Ct

    Interface structure and roughness

  • 72.20.Jv

    Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3447797

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. R. Sun, C. M. Xiong, T. Y. Zhao, S. Y. Zhang, Y. F. Chen, and B. G. Shen, Appl. Phys. Lett. 84, 1528 (2004)APPLAB000084000009001528000001
    N. Nakagawa, M. Asai, Y. Mukunoki, T. Susaki, and H. Y. Hwang, ibid. 86, 082504 (2005)APPLAB000086000008082504000001.

    J. R. Sun, B. G. Shen, Z. G. Sheng, and Y. P. Sun, Appl. Phys. Lett. 85, 3375 (2004)APPLAB000085000016003375000001
    Z. G. Sheng, B. C. Zhao, W. H. Song, Y. P. Sun, J. R. Sun, and B. G. Shen, ibid. 87, 242501 (2005)APPLAB000087000024242501000001.

    W. M. Lü, A. D. Wei, J. R. Sun, Y. Z. Chen, and B. G. Shen, Appl. Phys. Lett. 94, 082506 (2009)APPLAB000094000008082506000001.

    A. D. Wei, J. R. Sun, W. M. Lv, and B. G. Shen, Appl. Phys. Lett. 95, 052502 (2009)APPLAB000095000005052502000001.

    M. Minohara, Y. Furukawa, R. Yasuhara, H. Kumigashira, and M. Oshima, Appl. Phys. Lett. 94, 242106 (2009)APPLAB000094000024242106000001.

    R. H. Fowler, Phys. Rev. 38, 45 (1931).

    Y. Hikita, M. Nishikawa, T. Yajima, and H. Y. Hwang, Phys. Rev. B 79, 073101 (2009).


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