APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 26 / MAGNETISM AND SUPERCONDUCTIVITY

Appl. Phys. Lett. 96, 262504 (2010); http://dx.doi.org/10.1063/1.3456381 (3 pages)

Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO

S. H. Liu1, H. S. Hsu2, G. Venkataiah1, X. Qi3, C. R. Lin4, J. F. Lee5, K. S. Liang5, and J. C. A. Huang1,6

1Department of Physics, National Cheng Kung University, Tainan 701, Taiwan
2Department of Applied Physics, National Pintung University of Education, Pintung 900, Taiwan
3Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan
4Department of Mechanical Engineering, Institute of Nanotechnology, Southern Taiwan University, Tainan 710, Taiwan
5National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan
6Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 701, Taiwan

View MapView Map

(Received 22 April 2010; accepted 28 May 2010; published online 28 June 2010)

The mechanism of room temperature (RT) ferromagnetism for low doping concentration of 2.5% V in ZnO have been systematically discussed by measuring structural, electrical, and magnetic properties. The evolution of the Curie temperature from above RT in insulated V:ZnO powders to 270 K in semiconducting samples was observed with increasing carrier concentration by using different hydrogenated annealing treatment. The results provide a direct observation that the free carriers suppress the ferromagnetism and might be associated the phenomena of charge-transfer and interaction between bound magnetic polarons.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

annealing, bound states, carrier density, charge transfer states, crystal structure, Curie temperature, ferromagnetic materials, II-VI semiconductors, magnetic particles, magnetic polarons, semiconductor doping, semimagnetic semiconductors, vanadium, wide band gap semiconductors, zinc compounds

PACS

  • 81.05.Dz

    II-VI semiconductors

  • 75.50.Tt

    Fine-particle systems; nanocrystalline materials

  • 75.50.Pp

    Magnetic semiconductors

  • 75.50.Dd

    Nonmetallic ferromagnetic materials

  • 72.80.Ey

    III-V and II-VI semiconductors

  • 61.72.uj

    III-V and II-VI semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3456381

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Q. Xu, L. Hartmann, S. Zhou, A. Mcklich, M. Helm, G. Biehne, H. Hochmuth, M. Lorenz, M. Grundmann, and H. Schmidt, Phys. Rev. Lett. 101, 076601 (2008).

    J. H. Shim, T. Hwang, S. Lee, J. H. Park, S. J. Han, and Y. H. Jeong, Appl. Phys. Lett. 86, 082503 (2005)APPLAB000086000008082503000001.

    J. H. Park, M. G. Kim, H. M. Jang, S. Ryu, and Y. M. Kim, Appl. Phys. Lett. 84, 1338 (2004)APPLAB000084000008001338000001.

    S. K. Mandal, T. K. Nath, A. Das, and R. K. Kremer, Appl. Phys. Lett. 89, 162502 (2006)APPLAB000089000016162502000001.

    A. J. Behan, A. Mokhtari, H. J. Blythe, D. Score, X. H. Xu, J. R. Neal, A. M. Fox, and G. A. Gehring, Phys. Rev. Lett. 100, 047206 (2008).

    Z. L. Lu, H. S. Hsu, Y. H. Tzeng, F. M. Zhang, Y. W. Du, and J. C. A. Huang, Appl. Phys. Lett. 95, 102501 (2009)APPLAB000095000010102501000001.

    H. Raebiger, S. Lany, and A. Zunger, Phys. Rev. Lett. 101, 027203 (2008).

    S. Shin, S. Suga, M. Taniguchi, M. Fujisawa, H. Kanzaki, A. Fujimori, H. Daimon, Y. Ueda, K. Kosuge, and S. Kachi, Phys. Rev. B 41, 4993 (1990).

    S. H. Liu, H. S. Hsu, C. R. Lin, C. S. Lue, and J. C. A. Huang, Appl. Phys. Lett. 90, 222505 (2007)APPLAB000090000022222505000001.

    Y. Fu, Appl. Phys. Lett. 77, 118 (2000)APPLAB000077000001000118000001.

    J. Wong, F. W. Lytle, R. P. Messmer, and D. H. Maylotte, Phys. Rev. B 30, 5596 (1984).

    A. Janotti and C. G. V. D. Walle, Appl. Phys. Lett. 87, 122102 (2005)APPLAB000087000012122102000001.

    M. G. Wardle, J. P. Goss, and P. R. Briddon, Phys. Rev. Lett. 96, 205504 (2006).

    P. A. Wolff, R. N. Bhatt, and A. C. Durst, J. Appl. Phys. 79, 5196 (1996)JAPIAU000079000008005196000001.

    S. H. Liu, J. C. A. Huang, C. R. Lin, and X. Qi, J. Appl. Phys. 105, 07C502 (2009)JAPIAU00010500000707C502000001.

    Q. Xu, L. Hartmann, H. Schmidt, H. Hochmuth, M. Lorenz, R. Schmidt-Grund, C. Sturm, D. Spemann, and M. Grundmann, Phys. Rev. B 73, 205342 (2006).

    H. S. Hsu, C. P. Lin, H. Chou, and J. C. A. Huang, Appl. Phys. Lett. 93, 142507 (2008)APPLAB000093000014142507000001.


For access to citing articles, you need to log in.


Figures (4) Tables (1)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Reduced room-temperature ferromagnetism in intermediate conducting regime of V doped ZnO
  2. Interfacial barrier in manganite junctions with different crystallographic orientations
  3. Tuning of magnetism in ferromagnetic thin films by reversing the functional groups of molecular underlayer
  4. Boron diffusion in magnetic tunnel junctions with MgO (001) barriers and CoFeB electrodes
  5. Control of transmission in disordered graphene nanojunctions through stochastic resonance
Go to AIP Home
Copyright © American Institute of Physics
close