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Appl. Phys. Lett. 96, 262508 (2010); http://dx.doi.org/10.1063/1.3446841 (3 pages)

In situ tunneling measurements in a transmission electron microscope on nanomagnetic tunnel junctions

J. W. Lau1, P. Morrow1, J. C. Read1, V. Höink1, W. F. Egelhoff1, L. Huang2, and Y. Zhu2

1National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
2Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA

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(Received 5 April 2010; accepted 15 May 2010; published online 30 June 2010)

We showed that a chain of nanomagnetic tunnel junctions (MTJs) devices can be electrically addressed individually, in situ, in a transmission electron microscope, such that transport properties can be in principle, quantitatively correlated with each device’s defects and microstructure. A unique energy barrier was obtained for each device measured. Additionally, in situ tunneling magnetoresistance (TMR) measurements were obtained for a subset of devices. We found that TMR values for our nano-MTJs were generally smaller than TMR in the unpatterned film.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 85.75.-d

    Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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