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Appl. Phys. Lett. 96, 262511 (2010); http://dx.doi.org/10.1063/1.3458863 (3 pages)

Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

Pashupati Dhakal, G. McMahon, S. Shepard, T. Kirkpatrick, J. I. Oh, and M. J. Naughton

Department of Physics, Boston College, Chestnut Hill, Massachusetts 02467, USA

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(Received 4 May 2010; accepted 8 June 2010; published online 2 July 2010)

We have fabricated C–Ga–O nanowires by gallium focused ion beam-induced deposition from the carbon-based precursor phenanthrene. The electrical conductivity of the nanowires is weakly temperature dependent below 300 K and indicates a transition to a superconducting state below Tc = 7 K. We have measured the temperature dependence of the upper critical field Hc2(T) and estimate a zero temperature critical field of 8.8 T. The Tc of this material is approximately 40% higher than that of any other direct write nanowire, such as those based on C–W–Ga, expanding the possibility of fabricating direct-write nanostructures that superconduct above liquid helium temperatures.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 74.10.+v

    Occurrence, potential candidates

  • 74.25.Op

    Mixed states, critical fields, and surface sheaths

  • 61.46.Km

    Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

  • 74.62.-c

    Transition temperature variations, phase diagrams

  • 74.70.-b

    Superconducting materials other than cuprates

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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