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Applied Physics Letters / Volume 96 / Issue 26 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 96, 262901 (2010); http://dx.doi.org/10.1063/1.3457866 (3 pages)

Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

Jiun-Jia Huang, Chih-Wei Kuo, Wei-Chen Chang, and Tuo-Hung Hou

Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan

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(Received 23 April 2010; accepted 7 June 2010; published online 28 June 2010)

We have fabricated a Ti/TiO2/Pt oxide diode with excellent rectifying characteristics by the asymmetric Schottky barriers at the Ti/TiO2 (0.13 eV) and the TiO2/Pt (0.73 eV) interfaces. Instead of homogeneous conduction, the current transport is governed by the localized oxygen-deficient TiO2 filaments. In addition, the reproducible resistive-switching exists in the same structure, triggered by the forming process. The transition between two modes is ascribed to the destruction of the interface barriers at forming. The rectification stable up to 125 °C and 103 cycles under ±3 V sweep without interference with resistive-switching shows satisfactory reliability of TiO2 diodes for one diode-one resistor memory devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

MIM structures, platinum, rectification, Schottky barriers, Schottky diodes, titanium, titanium compounds

PACS

  • 73.30.+y

    Surface double layers, Schottky barriers, and work functions

  • 73.40.Rw

    Metal-insulator-metal structures

  • 73.40.Ei

    Rectification

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457866

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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