Effect of electrode configurations on the process-induced imprint behavior of epitaxial Pb(Zr0.52Ti0.48)O3 capacitors

Chen, Feng; Tan, Xuelian; Huang, Zhen; Xuan, Xiaofeng; Wu, Wenbin

doi:doi:10.1063/1.3458599

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Transition of stable rectification to resistive-switching in Ti/TiO₂/Pt oxide diode

We have fabricated a Ti/TiO2/Pt oxide diode with excellent rectifying characteristics by the asymmetric Schottky barriers at the Ti/TiO2 (0.13 eV) and the TiO2/Pt (0.73 eV) interfaces. Instead of homogeneous conduction, the current transport is governed by the localized oxygen-deficient TiO2 filaments. In addition, the reproducible resistive-switching exists in the same structure, triggered by the forming process. The transition between two modes is ascribed to the destruction of the interface ...

Temperature-dependent Raman scattering of KTa_1−xNb_xO₃ thin films

We report a Raman scattering investigation of KTa1−xNbxO3 (x = 0.35,0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 to 720 K is similar to the structural phase transitions of the end-member material KNbO3. Although similar in the phase sequence, the actual temperatures observed for phase transition temperatures are significantly different from those observed in the literature for bulk samples. Namely, the tetragonal (fer...

By using La_0.7Sr_0.3MnO₃ (L) and SrRuO₃ (S) electrodes, epitaxial Pb(Zr_0.52Ti_0.48)O₃ (PZT) capacitors with different electrode configurations, i.e., L/PZT/L (from top to bottom) (a), S/PZT/S (b), S/PZT/L (c), and L/PZT/S (d), have been fabricated and the process-induced imprint was investigated. All as-grown capacitors are nearly imprint-free; however, after being annealed at 10⁻⁵ Torr of O₂ the capacitors a (b) show a large negative (positive) imprinted polarization (P) state at zero electric-field (E), the capacitors c give strongly pinched P-E hysteresis loops, and the capacitors d are highly resistant to imprint failure. We show evidence that the internal fields could be attributed to the various oxygen-loss-related strain gradients at PZT top and bottom interfaces, induced during the annealing.

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KEYWORDS and PACS

Keywords

annealing, dielectric hysteresis, dielectric polarisation, electrodes, epitaxial layers, ferroelectric capacitors, ferroelectric thin films, lanthanum compounds, lead compounds, strontium compounds

PACS

84.32.Tt

Capacitors
85.50.-n

Dielectric, ferroelectric, and piezoelectric devices
77.80.Dj

Domain structure; hysteresis
61.72.Cc

Kinetics of defect formation and annealing
77.22.Ej

Polarization and depolarization

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http://dx.doi.org/10.1063/1.3458599

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0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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