Temperature-dependent Raman scattering of KTa1−xNbxO3 thin films

Bartasyte, A.; Kreisel, J.; Peng, W.; Guilloux-Viry, M.

doi:doi:10.1063/1.3455326

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Effect of electrode configurations on the process-induced imprint behavior of epitaxial Pb(Zr_0.52Ti_0.48)O₃ capacitors

By using La0.7Sr0.3MnO3 (L) and SrRuO3 (S) electrodes, epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) capacitors with different electrode configurations, i.e., L/PZT/L (from top to bottom) (a), S/PZT/S (b), S/PZT/L (c), and L/PZT/S (d), have been fabricated and the process-induced imprint was investigated. All as-grown capacitors are nearly imprint-free; however, after being annealed at 10−5 Torr of O2 the capacitors a (b) show a large negative (positive) imprinted polarization (P) state at zero electric-f...

Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures

The degradation of a high-k dielectric multilayer was investigated by measuring the time dependent leakage current under a constant voltage stress in metal-insulator-metal capacitor structures. When comparing the two multilayer structures of Al2O3/HfO2/Al2O3 and HfO2/Al2O3/HfO2, the former was characterized by a large fluctuation of the leakage current and the latter had an increased leakage current at the initial stage. These results are related to the different voltage drops of each individua...

We report a Raman scattering investigation of KTa_1−xNb_xO₃ (x = 0.35,0.5) thin films deposited on MgO and LaAlO₃ as a function of temperature. The observed phase sequence in the range from 90 to 720 K is similar to the structural phase transitions of the end-member material KNbO₃. Although similar in the phase sequence, the actual temperatures observed for phase transition temperatures are significantly different from those observed in the literature for bulk samples. Namely, the tetragonal (ferroelectric) to cubic (paraelectric) phase transition is up to 50 K higher in the films when compared to bulk samples. This enhanced ferroelectricity is attributed to biaxial strain in the investigated thin films.

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KEYWORDS and PACS

Keywords

ferroelectric thin films, Raman spectra, solid-state phase transformations

PACS

77.55.F-

High-permittivity capacitive films
81.30.Hd

Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
78.30.-j

Infrared and Raman spectra
77.80.-e

Ferroelectricity and antiferroelectricity

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http://dx.doi.org/10.1063/1.3455326

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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