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Applied Physics Letters / Volume 96 / Issue 26 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 96, 262904 (2010); http://dx.doi.org/10.1063/1.3456731 (3 pages)

Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures

Soon-Wook Kim1, Sung Kyun Lee1, Young Do Kim2, and Sibum Kim1

1Process Development Center, MagnaChip Semiconductor Ltd., Cheongju, Chungbuk 361-728, Republic of Korea
2Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea

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(Received 11 February 2010; accepted 28 May 2010; published online 1 July 2010)

The degradation of a high-k dielectric multilayer was investigated by measuring the time dependent leakage current under a constant voltage stress in metal-insulator-metal capacitor structures. When comparing the two multilayer structures of Al2O3/HfO2/Al2O3 and HfO2/Al2O3/HfO2, the former was characterized by a large fluctuation of the leakage current and the latter had an increased leakage current at the initial stage. These results are related to the different voltage drops of each individual layer as well as the thickness impact on the behavior of the current density versus electric field.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electric breakdown, hafnium compounds, high-k dielectric thin films, leakage currents, MIM devices, multilayers, reliability, thin film capacitors

PACS

  • 84.32.Tt

    Capacitors

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

  • 77.55.F-

    High-permittivity capacitive films

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3456731

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. C. Wang, D. C. Shie, and C. L. Lee, J. Appl. Phys. 98, 024503 (2005)JAPIAU000098000002024503000001.

    X. Zhao and D. Vanderbilt, Phys. Rev. B 65, 233106 (2002).


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