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Appl. Phys. Lett. 96, 262905 (2010); http://dx.doi.org/10.1063/1.3457786 (3 pages)

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

J. H. Lee1,2, X. Ke3, R. Misra3, J. F. Ihlefeld2, X. S. Xu4, Z. G. Mei2, T. Heeg1, M. Roeckerath5, J. Schubert5, Z. K. Liu2, J. L. Musfeldt4, P. Schiffer3, and D. G. Schlom1

1Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
2Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA
3Department of Physics, Pennsylvania State University, University Park, Pennsylvania 16802, USA
4Department of Chemistry, University of Tennessee, Knoxville, Tennessee 37996, USA
5Institute of Bio- and Nano-Systems (IBN1-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, D-52425 Jülich, Germany

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(Received 20 February 2010; accepted 4 June 2010; published online 2 July 2010)

We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.

© 2010 American Institute of Physics

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0003-6951 (print)  
1077-3118 (online)

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