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Applied Physics Letters / Volume 96 / Issue 26 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 263107 (2010); http://dx.doi.org/10.1063/1.3458818 (3 pages)

Current anisotropy of carbon nanotube diodes: Voltage and work function dependence

David J. Perello1, Seong Chu Lim2, Seung Jin Chae2, Innam Lee1, Moon. J. Kim3, Young Hee Lee2, and Minhee Yun1

1Department of Electrical Engineering, University of Pittsburgh, Pittsburgh, Pennsylvania 15219, USA
2Department of Physics, Department of Energy Science, Sungkyunkwan Advanced Institute of Nanotechnology, Suwon 440-746, Republic of Korea
3Department of Materials Science and Engineering, University of Texas-Dallas, Richardson, Texas 75080, USA

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(Received 17 February 2010; accepted 10 June 2010; published online 29 June 2010)

Here, we report a performance analysis on carbon nanotube (CNT) Schottky diodes using source-drain current anisotropy. An analytical model is derived based on thermionic field emission and used to correlate experimental data from Pd–Hf, Ti–Hf, Cr–Hf, Ti–Cr, and Pd–Au mixed metal devices fabricated on one single 6 mm long CNT. Results suggest that the difference in work functions of the two contact-metals, and not a dominant Schottky contact, determines diode performance. Results are further applied and demonstrated in a reversible polarity diode.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

carbon nanotubes, chromium, gold, hafnium, nanotube devices, palladium, Schottky barriers, Schottky diodes, titanium, work function

PACS

  • 85.30.Hi

    Surface barrier, boundary, and point contact devices

  • 85.35.Kt

    Nanotube devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458818

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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