• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Appl. Phys. Lett. 96, 263111 (2010); http://dx.doi.org/10.1063/1.3441406 (3 pages)

Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators

H. Bola George1, David P. Hoogerheide2, Charbel S. Madi1, David C. Bell1,3, Jene A. Golovchenko1,2, and Michael J. Aziz1

1Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA
2Department of Physics, Harvard University, Cambridge, Massachusetts 02138, USA
3Center for Nanoscale Systems, Harvard University, Cambridge, Massachusetts 02138, USA

View MapView Map

(Received 17 March 2010; accepted 7 May 2010; published online 1 July 2010)

We report the closure of nanopores to single-digit nanometer dimensions by ion sculpting in a range of amorphous materials including insulators (SiO2 and SiN), semiconductors (a-Si), and metallic glasses (Pd80Si20)—the building blocks of a single-digit nanometer electronic device. Ion irradiation of nanopores in crystalline materials (Pt and Ag) does not cause nanopore closure. Ion irradiation of c-Si pores below 100 °C and above 600 °C, straddling the amorphous-crystalline dynamic transition temperature, yields closure at the lower temperature but no mass transport at the higher temperature. Ion beam nanosculpting appears to be restricted to materials that either are or become amorphous during ion irradiation.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    W. L. Chan and E. Chason, J. Appl. Phys. 101, 121301 (2007)JAPIAU000101000012121301000001.

    W. L. Chan and E. Chason, Phys. Rev. B 72, 165418 (2005).

    C. S. Madi, B. Davidovitch, H. B. George, S. A. Norris, M. P. Brenner, and M. J. Aziz, Phys. Rev. Lett. 101, 246102 (2008).

    J. Erlebacher, M. Aziz, E. Chason, M. Sinclair, and J. Floro, Phys. Rev. Lett. 82, 2330 (1999).

    Q. Wei, J. Lian, W. Lu, and L. Wang, Phys. Rev. Lett. 100, 076103 (2008).

    C. C. Umbach, R. L. Headrick, and K. C. Chang, Phys. Rev. Lett. 87, 246104 (2001).

    T. van Dillen, A. Polman, P. R. Onck, and E. van der Giessen, Phys. Rev. B 71, 024103 (2005).

    D. M. Stein, C. J. McMullan, J. L. Li, and J. A. Golovchenko, Rev. Sci. Instrum. 75, 900 (2004)RSINAK000075000004000900000001.

    L. A. Marqués, L. Pelaz, M. Aboy, L. Enriquez, and J. Barbolla, Phys. Rev. Lett. 91, 135504 (2003).

    L. Pelaz, L. A. Marqués, and J. Barbolla, J. Appl. Phys. 96, 5947 (2004)JAPIAU000096000011005947000001.

    C. A. Volkert, J. Appl. Phys. 70, 3521 (1991)JAPIAU000070000007003521000001.

    M. L. Brongersma, E. Snoeks, and A. Polman, Appl. Phys. Lett. 71, 1628 (1997)APPLAB000071000012001628000001.

    M. L. Brongersma, E. Snoeks, T. van Dillen, and A. Polman, J. Appl. Phys. 88, 59 (2000)JAPIAU000088000001000059000001.

    K. Otani, X. Chen, J. W. Hutchinson, J. F. Chervinsky, and M. J. Aziz, J. Appl. Phys. 100, 023535 (2006)JAPIAU000100000002023535000001.

    F. Garrido, A. Benyagoub, A. Chamberod, J. C. Dran, A. Dunlop, S. Klaumunzer, and L. Thome, Phys. Rev. B 52, 6273 (1995).

    Y. -R. Kim, P. Chen, M. J. Aziz, D. Branton, and J. J. Vlassak, J. Appl. Phys. 100, 104322 (2006)JAPIAU000100000010104322000001.


For access to citing articles, you need to log in.


Figures (2)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close
Google Calendar
ADVERTISEMENT

close