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Applied Physics Letters / Volume 96 / Issue 26 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 263114 (2010); http://dx.doi.org/10.1063/1.3457997 (3 pages)

Simultaneous force and current mapping of the Si(111)-(7×7) surface by dynamic force microscopy

Yoshiaki Sugimoto1, Insook Yi1,2, Ken-ichi Morita1, Masayuki Abe1, and Seizo Morita1

1Graduate School of Engineering, Osaka University, 2-1 Yamada-Oka, Suita, Osaka 565-0871, Japan
2Division of Analysis and Research, Jeonju Center, Korea Basic Science Institute, 634-18, Keumam-dong, Dukjin-gu, Jeonju 561-180, Republic of Korea

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(Received 10 May 2010; accepted 7 June 2010; published online 2 July 2010)

We simultaneously obtain spatial maps of the interaction force and current between conductive tips and the Si(111)-(7×7) surface. The difference in the topographic profiles between atomic force microscopy and scanning tunneling microscopy is clearly visualized. We observe a current drop in the region where the chemical bonding force between the tip and surface atoms becomes significant. The peak values of the conductance above adatom sites are in good agreement with the value previously obtained by the theoretical simulation.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

atomic force microscopy, bonds (chemical), elemental semiconductors, scanning tunnelling microscopy, silicon, surface conductivity, surface reconstruction

PACS

  • 73.25.+i

    Surface conductivity and carrier phenomena

  • 72.80.Cw

    Elemental semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457997

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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