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Applied Physics Letters / Volume 96 / Issue 26 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 263115 (2010); http://dx.doi.org/10.1063/1.3456385 (3 pages)

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

Hung-Wen Huang1, Jhi-Kai Huang1,2, Shou-Yi Kuo3, Kang-Yuan Lee2, and Hao-Chung Kuo1

1Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30050, Taiwan
2Unilite Corporation, Miaoli 350, Taiwan
3Department of Electronic Engineering, Chang Gung University, Tao-Yuan 333, Taiwan

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(Received 15 March 2010; accepted 25 May 2010; published online 2 July 2010)

In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

dislocations, gallium compounds, III-V semiconductors, light emitting diodes, nanolithography, reflectivity, transmission electron microscopy, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3456385

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. Gao, F. Yan, Y. Zhang, J. Li, Y. Zeng, and G. Wang, J. Appl. Phys. 103, 014314 (2008)JAPIAU000103000001014314000001.

    C. H. Chiu, H. H. Yen, C. L. Chao, Z. Y. Li, P. C. Yu, H. C. Kuo, T. C. Lu, S. C. Wang, K. M. Lau, and S. J. Cheng, Appl. Phys. Lett. 93, 081108 (2008)APPLAB000093000008081108000001.

    Z. S. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, Appl. Phys. Lett. 88, 171103 (2006)APPLAB000088000017171103000001.


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