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Applied Physics Letters / Volume 96 / Issue 26 / ORGANIC ELECTRONICS AND PHOTONICS
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Appl. Phys. Lett. 96, 263301 (2010); http://dx.doi.org/10.1063/1.3455840 (3 pages)

Solvent-free, direct printing of organic semiconductors in atmosphere

Shaurjo Biswas1, Kevin P. Pipe2, and Max Shtein1

1Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
2Mechanical Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA

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(Received 16 January 2010; accepted 19 May 2010; published online 28 June 2010)

Additive, solvent-free printing of molecular organic semiconductors in ambient atmosphere is demonstrated, by evaporating organic source material into nitrogen carrier gas, collimating and impinging it onto a substrate where the organic molecules condense. A surrounding annular guard flow focuses the primary jet and shields it from contact with the ambient oxygen and moisture, enabling device-quality deposits. As an example, electroluminescence efficiency of organic light emitting devices (OLEDS) with emissive layers printed in air is shown to increase with guard flow rate, attaining parity with all-vacuum thermally evaporated OLEDs.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescence, inert gases, organic semiconductors, printing, surface treatment

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3455840

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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Figures (click on thumbnails to view enlargements)

FIG.1
(a) Schematic and (b) photograph of nozzle used in vapor jet printing experiment.

FIG.1 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.2
(a) Simulated velocity contours for standard and guard flow-enhanced printing scenarios, clearly showing isolation of the primary jet from the ambient by the guard jet. (b) Simulated mass distribution of AlQ3 vapor clearly showing collimation. (c) Patterns realized by GF-OVJP at 48.6 nm/s local deposition rate, under UV illumination.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
(a) J-V-L characteristics of vacuum- and GF-OVJP-deposited (with FGF/FCG = 3) OLEDs. The GF-OVJP deposited OLED structure is shown in the inset. (b) EQE vs current density of vacuum- and GF-OVJP-deposited OLEDs, clearly showing the efficiency of printed devices approaching that of vacuum-deposited devices. (b) Inset: EL spectra of the two devices in (a). (c) EQE at 100 mA/cm2 vs ratio of guard to primary jet flow rates, clearly showing the beneficial effects of the guard jet. (Inset: photograph of GF-OVJP deposited OLED.)

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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