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Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263503 (2010); http://dx.doi.org/10.1063/1.3457468 (3 pages)

Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon

Andrew Pan, Dee-Son Pan, and Chi On Chui

Department of Electrical Engineering, University of California, Los Angeles, California 90095, USA

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(Received 14 March 2010; accepted 20 May 2010; published online 28 June 2010)

We propose a mechanism to explain the excess noise observed in silicon p-n junctions biased at the onset of mixed tunneling and avalanche breakdown. Electrons tunneling into different conduction valleys are treated as separate reaction channels with different impact ionization rates, due to different initial energies, that contribute excess noise. This noise contribution is regulated by the biasing circuit to prevent runaway. We have analyzed data from past measurements and shown higher conduction valley carrier channels can adequately account for the observed excess noise. The proposed framework provides an explanation of the excess noise data without any fitting parameters.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

avalanche breakdown, elemental semiconductors, impact ionisation, p-n junctions, silicon, tunnelling

PACS

  • 77.22.Jp

    Dielectric breakdown and space-charge effects

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 72.20.Ht

    High-field and nonlinear effects

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457468

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. I. Lee and D. S. Pan, Appl. Phys. Lett. 89, 013501 (2006)APPLAB000089000001013501000001.

    See for example C. H. Tan, J. C. Clark, J. P. R. David, G. J. Rees, S. A. Plimmer, R. C. Tozer, D. C. Herbert, D. J. Robbins, W. Y. Leong, and J. Newey, Appl. Phys. Lett. 76, 3926 (2000)APPLAB000076000026003926000001
    and references therein.

    D. R. Fredkin and G. H. Wannier, Phys. Rev. 128, 2054 (1962).

    G. A. Baraff, Phys. Rev. 128, 2507 (1962).

    N. Sano and A. Yoshii, Phys. Rev. B 45, 4171 (1992).

    E. O. Kane, J. Appl. Phys. 32, 83 (1961)JAPIAU000032000001000083000001.

    J. V. Morgan and E. O. Kane, Phys. Rev. Lett. 3, 466 (1959).


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