Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

Deleruyelle, Damien; Muller, Christophe; Amouroux, Julien; Müller, Robert

doi:doi:10.1063/1.3458596

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Mechanism for excess noise in mixed tunneling and avalanche breakdown of silicon

We propose a mechanism to explain the excess noise observed in silicon p-n junctions biased at the onset of mixed tunneling and avalanche breakdown. Electrons tunneling into different conduction valleys are treated as separate reaction channels with different impact ionization rates, due to different initial energies, that contribute excess noise. This noise contribution is regulated by the biasing circuit to prevent runaway. We have analyzed data from past measurements and shown higher conduct...

Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

Data and analysis are presented showing that heavy p-type stochastic doping of the base barrier region of an n-p-n quantum-well (QW) light-emitting transistor (LET) or transistor laser (TL), the acceptors within tunneling range of the QW and perturbing the QW, enhances the LET or TL base recombination (base current) and the device speed (bandwidth). A relationship between the spontaneous recombination rate (1/lifetime, 1/τ) and the base current density is derived by considering (stochastic-dopi...

The local electrical properties of copper tetracyanoquinodimethane (CuTCNQ)/HfO₂/Pt stacks were investigated thanks to conductive-atomic force microscopy (AFM) measurements. Local I-V and I-t spectroscopy evidenced repeatable and reversible bipolar electrical switching (SET and RESET operations) at the nanometer scale beneath the AFM tip. Experimental results suggest that resistive switching is due to the creation/dissolution of conductive filaments bridging the CuTCNQ surface to the AFM tip. A physical model based on the migration of Cu⁺ ions within a nanogap and the growth of a conductive filament shows an excellent agreement with the experimental results during SET operation achieved at nanoscale.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

atomic force microscopy, copper compounds, multilayers, organometallic compounds, random-access storage

PACS

84.30.Sk

Pulse and digital circuits
73.63.-b

Electronic transport in nanoscale materials and structures

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3458596

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

Figures (5)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)