Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser

Then, H. W.; Wu, C. H.; Feng, M.; Holonyak, N.; Walter, G.

doi:doi:10.1063/1.3458708

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Electrical nanocharacterization of copper tetracyanoquinodimethane layers dedicated to resistive random access memories

The local electrical properties of copper tetracyanoquinodimethane (CuTCNQ)/HfO2/Pt stacks were investigated thanks to conductive-atomic force microscopy (AFM) measurements. Local I-V and I-t spectroscopy evidenced repeatable and reversible bipolar electrical switching (SET and RESET operations) at the nanometer scale beneath the AFM tip. Experimental results suggest that resistive switching is due to the creation/dissolution of conductive filaments bridging the CuTCNQ surface to the AFM tip. A...

Effects of cathode buffer layers on the efficiency of bulk-heterojunction solar cells

The effects of cathode buffer layers on the bulk-heterojunction solar cells are investigated. Comparing with the device without buffer layer, obvious enhancements of Voc from 0.38 to 0.65 V and fill factor from 44% to 63% have been achieved by using 2 nm bathocuproine layer, which make the efficiency of the devices improved from 1.63% to 4.11%. Alternatively, lithium fluoride and/or tris(8-hydroxyquinolinato) aluminum were also introduced for clarification purpose. X-ray photoelectron spectrosc...

Data and analysis are presented showing that heavy p-type stochastic doping of the base barrier region of an n-p-n quantum-well (QW) light-emitting transistor (LET) or transistor laser (TL), the acceptors within tunneling range of the QW and perturbing the QW, enhances the LET or TL base recombination (base current) and the device speed (bandwidth). A relationship between the spontaneous recombination rate (1/lifetime, 1/τ) and the base current density is derived by considering (stochastic-doping) modified rate balance equations involving the spontaneous, A₂₁, and stimulated recombination coefficients, B₂₁ = B₁₂, and is verified with experimental optical microwave modulation (bandwidth) data obtained on QW-LETs.

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KEYWORDS and PACS

Keywords

current density, electron-hole recombination, heterojunction bipolar transistors, quantum well lasers, semiconductor doping, semiconductor quantum wells, tunnelling

PACS

42.55.Px

Semiconductor lasers; laser diodes
85.30.Pq

Bipolar transistors
85.35.Be

Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3458708

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

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$abstract.society.value is a Member of CrossRef

American Institute of Physics

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