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Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263507 (2010); http://dx.doi.org/10.1063/1.3456536 (3 pages)

Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter

Robert Bock, Susanne Mau, Jan Schmidt, and Rolf Brendel

Institut für Solarenergieforschung Hameln/Emmerthal (ISFH), Am Ohrberg 1, D-31860 Emmerthal, Germany

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(Received 12 May 2010; accepted 2 June 2010; published online 28 June 2010)

We introduce an n-type Si back-junction back-contact solar cell based on an Al-doped p+ rear emitter fabricated by means of screen-printing and firing instead of the commonly applied high-temperature boron diffusion. In order to demonstrate the applicability of this easy-to-fabricate p+ emitter to a back-junction back-contact solar cell we present experimental results showing 19.0% cell efficiency. The structuring of the cell is performed by laser processing omitting any photolithography. Using two-dimensional device simulation we determine a realistic efficiency limit of 21.6% for this cell type.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium, elemental semiconductors, firing (materials), laser materials processing, silicon, solar cells

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3456536

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    R. Bock, J. Schmidt, and R. Brendel, Appl. Phys. Lett. 91, 112112 (2007)APPLAB000091000011112112000001.

    M. J. Kerr, J. Schmidt, and A. Cuevas, J. Appl. Phys. 89, 3821 (2001)JAPIAU000089000007003821000001.

    A. Cuevas, P. A. Basore, G. Giroult-Matlakowski, and C. Dubois, J. Appl. Phys. 80, 3370 (1996)JAPIAU000080000006003370000001.


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