Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination

Yin, Hao; Li, Tian-xin; Hu, Wei-da; Wang, Wen-juan; Li, Ning; Chen, Xiao-shuang; Lu, Wei

doi:doi:10.1063/1.3457872

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Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter

We introduce an n-type Si back-junction back-contact solar cell based on an Al-doped p+ rear emitter fabricated by means of screen-printing and firing instead of the commonly applied high-temperature boron diffusion. In order to demonstrate the applicability of this easy-to-fabricate p+ emitter to a back-junction back-contact solar cell we present experimental results showing 19.0% cell efficiency. The structuring of the cell is performed by laser processing omitting any photolithography. Using...

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The nonequilibrium carrier distribution in an InGaAs/InP avalanche photodiode under light illumination is obtained by cross-sectional scanning capacitance microscopy combined with numerical simulation. The sheet density of negative surface charge is determined to be 1.85×10¹⁰ cm⁻² on the native-oxidized InGaAs (110) face. This surface charge is found responsible for the accumulation of minority holes, which leads to an inversion layer at the sidewall surface of device in the absorption region under illumination exceeding 0.1 mW/cm². The inversion depth increases up to 200 nm along with the enhancement of excitation intensity. This work suggests that a surface leakage channel may form in semiconductor photodetectors through detection light excitation.

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KEYWORDS and PACS

Keywords

avalanche photodiodes, carrier density, gallium arsenide, III-V semiconductors, indium compounds, photodetectors, surface charging

PACS

85.60.Gz

Photodetectors (including infrared and CCD detectors)
85.60.Dw

Photodiodes; phototransistors; photoresistors
78.66.Fd

III-V semiconductors
73.40.Kp

III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
72.20.Jv

Charge carriers: generation, recombination, lifetime, and trapping

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3457872

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

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