APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263509 (2010); http://dx.doi.org/10.1063/1.3458799 (3 pages)

Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors

Kenji Nomura1, Takashi Aoki2, Kiyoshi Nakamura2, Toshio Kamiya3, Takashi Nakanishi4, Takayuki Hasegawa4, Mutsumi Kimura4, Takeo Kawase2, Masahiro Hirano1, and Hideo Hosono1,3

1Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259, Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
2SEIKO-EPSON, 281 Fujimi, Fujimi-cho, Suwa 399-0293, Japan
3Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
4Department of Electronics and Informatics, Ryukoku University, 1-5 Yokotani, Seta Oe-cho, Otsu, Shiga 520-2194, Japan

View MapView Map

(Received 2 May 2010; accepted 28 May 2010; published online 30 June 2010)

A three-dimensional vertically-stacked flexible integrated circuit is demonstrated based on hybrid complementary inverters made of n-type In–Ga–Zn–O (a-IGZO) amorphous oxide thin-film transistors (TFTs) and p-type poly-(9,9-dioctylfluorene-co-bithiophene) (F8T2) polymer TFTs, where all the fabrication processes were performed at temperatures ≤ 120 °C. Saturation mobilities of the a-IGZO TFT and the F8T2 TFT are ∼ 3.2 and ∼ 1.7×10−3 cm2 V−1 s−1, respectively, from which we chose the appropriate dimensions of the TFTs so as to obtain a good balance for the inverter operation. The maximum voltage gain is ∼ 67, which is better than those reported for organic/oxide hybrid complementary inverters.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

field effect integrated circuits, gallium compounds, indium compounds, invertors, organic semiconductors, p-n heterojunctions, polymers, thin film transistors

PACS

  • 85.40.-e

    Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology

  • 85.30.Tv

    Field effect devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458799

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Flexible Electronics: Materials and Applications, edited by W. S. Wong and A. Salleo (Springer, New York, 2008).

    A. Dodabalapur, J. Baumbach, K. Baldwin, and H. E. Katz, Appl. Phys. Lett. 68, 2246 (1996)APPLAB000068000016002246000001.

    M. S. Oh, D. K. Hwang, K. Lee, S. Im, and S. Yi, Appl. Phys. Lett. 90, 173511 (2007)APPLAB000090000017173511000001.

    J. H. Na, M. Kitamura, and Y. Arakawa, Appl. Phys. Lett. 93, 213505 (2008)APPLAB000093000021213505000001.

    K. E. Paul, W. S. Wong, S. E. Ready, and R. A. Street, Appl. Phys. Lett. 83, 2070 (2003)APPLAB000083000010002070000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Three-dimensionally stacked flexible integrated circuit: Amorphous oxide/polymer hybrid complementary inverter using n-type a-In–Ga–Zn–O and p-type poly-(9,9-dioctylfluorene-co-bithiophene) thin-film transistors
  2. Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination
  3. Back-junction back-contact n-type silicon solar cells with screen-printed aluminum-alloyed emitter
  4. Effects of cathode buffer layers on the efficiency of bulk-heterojunction solar cells
  5. Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser
Go to AIP Home
Copyright © American Institute of Physics
close