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Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263510 (2010); http://dx.doi.org/10.1063/1.3458832 (3 pages)

Wigner crystallization due to electrons localized at deep traps in two-dimensional amorphous dielectric

S. S. Shaimeev1, V. A. Gritsenko1, and Hei Wong2

1Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
2Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong

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(Received 9 April 2010; accepted 9 June 2010; published online 30 June 2010)

We calculated the spatial distribution of electrons localized at deep neutral traps in some amorphous dielectric films based on some fundamental physics in order to explain the phenomena such as space ordering of electrons. We showed that when the surface density of traps (Ns) is much larger than that of the trapped electrons (ns), e.g., ns/Ns ≤ 0.001, Wigner crystallization occurs due to the Coulomb repulsion of trapped electrons and a two-dimensional quasiperiodic hexagonal lattice or Wigner glass can be formed.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

deep levels, dielectric thin films, electron traps, noncrystalline structure, silicon compounds, Wigner crystal

PACS

  • 71.55.Jv

    Disordered structures; amorphous and glassy solids

  • 73.50.Gr

    Charge carriers: generation, recombination, lifetime, trapping, mean free paths

  • 77.55.-g

    Dielectric thin films

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458832

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    T. Ando, A. Fowler, and F. Stern, Rev. Mod. Phys. 54, 437 (1982).

    W. L. Warren, J. Canicki, and J. R. Robertson, J. Appl. Phys. 74, 4034 (1993)JAPIAU000074000006004034000001.

    I. A. Chaiyasena, P. M. Lenahan, and G. J. Dunn, J. Appl. Phys. 72, 820 (1992)JAPIAU000072000002000820000001.

    A. Kalnitsky, J. P. Ellul, E. H. Poindexter, P. J. Caplan, R. A. Lux, and A. R. Boothroud, J. Appl. Phys. 67, 7359 (1990)JAPIAU000067000012007359000001.

    W. L. Warren, P. M. Lenahan, and S. E. Curry, Phys. Rev. Lett. 65, 207 (1990).

    S. L. Miller, D. M. Fleetwood, and P. J. McWhorter, Phys. Rev. Lett. 69, 820 (1992).

    V. A. Gritsenko, J. B. Xu, I. H. Wilson, R. M. Kwok, and Y. H. Ng, Phys. Rev. Lett. 81, 1054 (1998).

    G. Pacchioni, G. Ierano, and A. M. Marquez, Phys. Rev. Lett. 81, 377 (1998).

    N. -M. Park, C. -J. Choi, T. -Y. Seong, and S. -J. Park, Phys. Rev. Lett. 86, 1355 (2001).

    K. A. Nasyrov, V. A. Gritsenko, Y. N. Novikov, E. -H. Lee, S. Y. Yoon, and C. W. Kim, J. Appl. Phys. 96, 4293 (2004)JAPIAU000096000008004293000001.

    K. A. Nasyrov, S. S. Shaimeev, V. A. Gritsenko, and J. H. Han, J. Appl. Phys. 105, 123709 (2009)JAPIAU000105000012123709000001.

    H. Maes and R. Van Overstraeten, J. Appl. Phys. 47, 667 (1976)JAPIAU000047000002000667000001.


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