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Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263512 (2010); http://dx.doi.org/10.1063/1.3459968 (3 pages)

Correlation between kink and cathodoluminescence spectra in AlGaN/GaN high electron mobility transistors

G. Meneghesso1, F. Rossi2, G. Salviati2, M. J. Uren3, E. Muñoz4, and E. Zanoni1

1Department of Information Engineering, University of Padova, Via Gradenigo 6/A, 35131 Padova, Italy
2IMEM-CNR Institute, Viale Usberti 37/A, 43124 Parma, Italy
3QinetiQ Ltd., Malvern WR14 3PS, United Kingdom
4ISOM and DIE, Universidad Politecnica of Madrid, Madrid 28034, Spain

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(Received 24 May 2010; accepted 10 June 2010; published online 1 July 2010)

The “kink” effect in AlGaN/GaN high electron mobility transistor current-voltage characteristics is shown to be associated with the epitaxial growth and is unaffected by fabrication process or growth substrate in device wafers from two epitaxy sources and three foundries. We demonstrate that there is a direct correlation between the presence of the “kink” and the presence of a broad yellow cathodoluminescence band. On the basis of generally accepted models for yellow luminescence, we propose that the kink is due to the presence of deep levels in the GaN buffer layer which decrease the drain current when negatively charged.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cathodoluminescence, deep levels, epitaxial growth, gallium compounds, high electron mobility transistors, III-V semiconductors, semiconductor heterojunctions

PACS

  • 85.30.Tv

    Field effect devices

  • 78.60.Hk

    Cathodoluminescence, ionoluminescence

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3459968

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    H. F. Sun and C. R. Bolognesi, Appl. Phys. Lett.90, 123505 (2007)APPLAB000090000012123505000001.

    C. B. Soh, S. J. Chua, H. F. Lim, D. Z. Chi, S. Tripathy, and W. Liu, J. Appl. Phys. 96, 1341 (2004)JAPIAU000096000003001341000001.

    E. Calleja, F. J. Sanchez, D. Basak, M. A. Sanchez-Garcia, E. Muñoz, I. Izpura, F. Calle, J. M. G. Tijero, J. L. Sanchez-Rojas, B. Beaumont, P. Lorenzini, and P. Gibart, Phys. Rev. B 55, 4689 (1997).

    L. Partain, D. Day, and R. Powell, J. Appl. Phys. 74, 335 (1993)JAPIAU000074000001000335000001.


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