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Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263513 (2010); http://dx.doi.org/10.1063/1.3455880 (3 pages)

Detection of mechanical resonance of a single-electron transistor by direct current

Yu. A. Pashkin1, T. F. Li1,2, J. P. Pekola3, O. Astafiev1, D. A. Knyazev4, F. Hoehne1,5, H. Im1,6, Y. Nakamura1, and J. S. Tsai1

1NEC Nano Electronics Research Laboratories and RIKEN Advanced Science Institute, Tsukuba, Ibaraki 305-8501, Japan
2Institute of Microelectronics, Tsinghua University, Beijing 100084, People's Republic of China
3Low Temperature Laboratory, Aalto University School of Science and Technology, P.O. Box 13500, FI-00076 Aalto, Finland
4P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow 119991, Russia
5Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
6Department of Semiconductor Science, Dongguk University, Phil-Dong, Seoul 100-715, Republic of Korea

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(Received 18 February 2010; accepted 28 May 2010; published online 1 July 2010)

We have suspended an Al based single-electron transistor (SET) whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island is placed underneath to increase the SET coupling to mechanical motion. The device can be considered as a doubly clamped Al beam that can transduce mechanical vibrations into variations in the SET current. Our simulations based on the orthodox model, with the SET parameters estimated from the experiment, reproduce the observed transport characteristics in detail.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium, aluminium compounds, resonance, single electron transistors, vibrations

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3455880

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. L. Ekinci and M. L. Roukes, Rev. Sci. Instrum. 76, 061101 (2005)RSINAK000076000006061101000001.

    K. C. Schwab and M. L. Roukes, Phys. Today 58, 36 (2005)PHTOAD000058000007000036000001.

    T. A. Fulton and G. J. Dolan, Phys. Rev. Lett. 59, 109 (1987).

    T. F. Li, Yu. A. Pashkin, O. Astafiev, Y. Nakamura, J. S. Tsai, and H. Im, Appl. Phys. Lett. 92, 043112 (2008)APPLAB000092000004043112000001.

    F. Hoehne, Yu. A. Pashkin, O. Astafiev, L. Faoro, L. B. Ioffe, Y. Nakamura, and J. S. Tsai, Phys. Rev. B 81, 184112 (2010).

    A. B. Zorin, F. J. Ahlers, J. Niemeyer, T. Weimann, H. Wolf, V. A. Krupenin, and S. V. Lotkhov, Phys. Rev. B 53, 13682 (1996).


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