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Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263514 (2010); http://dx.doi.org/10.1063/1.3459144 (3 pages)

Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes

Gong-Ru Lin, Yi-Hao Pai, Cheng-Tao Lin, and Chun-Chieh Chen

Department of Electrical Engineering, Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan

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(Received 3 March 2010; accepted 3 June 2010; published online 2 July 2010)

Electroluminescence (EL) of the metal-insulator-semiconductor light-emitting diodes (MISLEDs) made by Si-rich SiNx and SiOx films with buried Si nanocrystals are compared. The SiNx facilitates carrier transport and EL from MISLED with turn-on current and voltage of 4 μA and 12 V by reducing barrier heights at indium tin oxide /SiNx and SiNx/Si-nc interfaces. The SiNx MISLED exhibits larger charge loss rate of 12% within 200 s and shorter delay time of 3.86×10−4 sec than SiOx one, which limit its external EL quantum efficiency by strong carrier escaping effect due to the insufficient carrier confinement in Si nanocrystals with low interfacial barriers.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescence, light emitting diodes, MIS devices, silicon compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3459144

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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