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Applied Physics Letters / Volume 96 / Issue 26 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 263515 (2010); http://dx.doi.org/10.1063/1.3458700 (3 pages)

Metal-related gate sinking due to interfacial oxygen layer in Ir/InAlN high electron mobility transistors

C. Ostermaier1, G. Pozzovivo1, B. Basnar1, W. Schrenk1, M. Schmid2, L. Tóth3, B. Pécz3, J.-F. Carlin4, M. Gonschorek4, N. Grandjean4, G. Strasser1, D. Pogany1, and J. Kuzmik1,5

1Institute of Solid State Electronics, Vienna University of Technology, A-1040 Vienna, Austria
2Institute of Applied Physics, Vienna University of Technology, A-1040 Vienna, Austria
3Research Institute for Technical Physics and Material Science, H-1525 Budapest, Hungary
4Institute of Condensed Matter Physics, EPFL, CH-1015 Lausanne, Switzerland
5Institute of Electrical Engineering, SAS, 84104 Bratislava, Slovakia

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(Received 5 May 2010; accepted 6 June 2010; published online 2 July 2010)

We report on an annealing-induced “gate sinking” effect in a 2-nm-thin In0.17Al0.83N/AlN barrier high electron mobility transistor with Ir gate. Investigations by transmission electron microscopy linked the effect to an oxygen containing interlayer between the gate metal and the InAlN layer and revealed diffusion of oxygen into iridium during annealing. Below 700 °C the diffusion is inhomogeneous and seems to occur along grain boundaries, which is consistent with the capacitance-voltage analysis. Annealing at 700 °C increased the gate capacitance over a factor 2, shifted the threshold voltage from +0.3 to +1 V and increased the transconductance from 400 to 640 mS/mm.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, annealing, diffusion, grain boundaries, high electron mobility transistors, III-V semiconductors, indium compounds, iridium, transmission electron microscopy, wide band gap semiconductors

PACS

  • 85.30.Tv

    Field effect devices

  • 81.05.Ea

    III-V semiconductors

  • 61.72.Cc

    Kinetics of defect formation and annealing

  • 61.72.Mm

    Grain and twin boundaries

  • 66.30.H-

    Self-diffusion and ionic conduction in nonmetals

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458700

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    J. Kuzmik, G. Pozzovivo, C. Ostermaier, G. Strasser, D. Pogany, E. Gornik, J. F. Carlin, M. Gonschorek, E. Feltin, and N. Grandjean, J. Appl. Phys. 106, 124503 (2009)JAPIAU000106000012124503000001.

    C. U. Pinnow, I. Kasko, N. Nagel, S. Poppa, T. Mikolajick, C. Dehm, W. Hösler, F. Fleyl, F. Jahnel, M. Seibt, U. Geyer, and K. Samwer, J. Appl. Phys. 91, 9591 (2002)JAPIAU000091000012009591000001.

    S. Luryi, Appl. Phys. Lett. 52, 501 (1988)APPLAB000052000006000501000001.


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