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Applied Physics Letters / Volume 96 / Issue 26 / INTERDISCIPLINARY AND GENERAL PHYSICS

Appl. Phys. Lett. 96, 264102 (2010); http://dx.doi.org/10.1063/1.3458783 (3 pages)

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

B. C. Johnson1, G. C. Tettamanzi2, A. D. C. Alves1, S. Thompson1, C. Yang1, J. Verduijn2, J. A. Mol2, R. Wacquez3, M. Vinet4, M. Sanquer3, S. Rogge2, and D. N. Jamieson1

1School of Physics, University of Melbourne, Victoria 3010, Australia
2Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
3INAC-SPSMS, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble, France
4LETI-Minatec, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble, France

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(Received 12 May 2010; accepted 9 June 2010; published online 30 June 2010)

We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, ion beam effects, MOSFET, silicon

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3458783

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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