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28 Jun 2010

Volume 96, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 96, 261101 (2010); http://dx.doi.org/10.1063/1.3456618 (3 pages)

I. V. Konoplev, L. Fisher, A. W. Cross, A. D. R. Phelps, K. Ronald, and C. W. Robertson
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Transition of stable rectification to resistive-switching in Ti/TiO2/Pt oxide diode

Jiun-Jia Huang, Chih-Wei Kuo, Wei-Chen Chang, and Tuo-Hung Hou

Appl. Phys. Lett. 96, 262901 (2010); http://dx.doi.org/10.1063/1.3457866 (3 pages) | Cited 23 times

Online Publication Date: 28 June 2010

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We have fabricated a Ti/TiO2/Pt oxide diode with excellent rectifying characteristics by the asymmetric Schottky barriers at the Ti/TiO2 (0.13 eV) and the TiO2/Pt (0.73 eV) interfaces. Instead of homogeneous conduction, the current transport is governed by the localized oxygen-deficient TiO2 filaments. In addition, the reproducible resistive-switching exists in the same structure, triggered by the forming process. The transition between two modes is ascribed to the destruction of the interface barriers at forming. The rectification stable up to 125 °C and 103 cycles under ±3 V sweep without interference with resistive-switching shows satisfactory reliability of TiO2 diodes for one diode-one resistor memory devices.
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73.30.+y Surface double layers, Schottky barriers, and work functions
73.40.Rw Metal-insulator-metal structures
73.40.Ei Rectification

Effect of electrode configurations on the process-induced imprint behavior of epitaxial Pb(Zr0.52Ti0.48)O3 capacitors

Feng Chen, Xuelian Tan, Zhen Huang, Xiaofeng Xuan, and Wenbin Wu

Appl. Phys. Lett. 96, 262902 (2010); http://dx.doi.org/10.1063/1.3458599 (3 pages) | Cited 6 times

Online Publication Date: 28 June 2010

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By using La0.7Sr0.3MnO3 (L) and SrRuO3 (S) electrodes, epitaxial Pb(Zr0.52Ti0.48)O3 (PZT) capacitors with different electrode configurations, i.e., L/PZT/L (from top to bottom) (a), S/PZT/S (b), S/PZT/L (c), and L/PZT/S (d), have been fabricated and the process-induced imprint was investigated. All as-grown capacitors are nearly imprint-free; however, after being annealed at 10−5 Torr of O2 the capacitors a (b) show a large negative (positive) imprinted polarization (P) state at zero electric-field (E), the capacitors c give strongly pinched P-E hysteresis loops, and the capacitors d are highly resistant to imprint failure. We show evidence that the internal fields could be attributed to the various oxygen-loss-related strain gradients at PZT top and bottom interfaces, induced during the annealing.
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84.32.Tt Capacitors
85.50.-n Dielectric, ferroelectric, and piezoelectric devices
77.80.Dj Domain structure; hysteresis
61.72.Cc Kinetics of defect formation and annealing
77.22.Ej Polarization and depolarization

Temperature-dependent Raman scattering of KTa1−xNbxO3 thin films

A. Bartasyte, J. Kreisel, W. Peng, and M. Guilloux-Viry

Appl. Phys. Lett. 96, 262903 (2010); http://dx.doi.org/10.1063/1.3455326 (3 pages) | Cited 3 times

Online Publication Date: 30 June 2010

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We report a Raman scattering investigation of KTa1−xNbxO3 (x = 0.35,0.5) thin films deposited on MgO and LaAlO3 as a function of temperature. The observed phase sequence in the range from 90 to 720 K is similar to the structural phase transitions of the end-member material KNbO3. Although similar in the phase sequence, the actual temperatures observed for phase transition temperatures are significantly different from those observed in the literature for bulk samples. Namely, the tetragonal (ferroelectric) to cubic (paraelectric) phase transition is up to 50 K higher in the films when compared to bulk samples. This enhanced ferroelectricity is attributed to biaxial strain in the investigated thin films.
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77.55.F- High-permittivity capacitive films
81.30.Hd Constant-composition solid-solid phase transformations: polymorphic, massive, and order-disorder
78.30.-j Infrared and Raman spectra
77.80.-e Ferroelectricity and antiferroelectricity

Effects of electrical stress on the leakage current characteristics of multilayer capacitor structures

Soon-Wook Kim, Sung Kyun Lee, Young Do Kim, and Sibum Kim

Appl. Phys. Lett. 96, 262904 (2010); http://dx.doi.org/10.1063/1.3456731 (3 pages) | Cited 4 times

Online Publication Date: 1 July 2010

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The degradation of a high-k dielectric multilayer was investigated by measuring the time dependent leakage current under a constant voltage stress in metal-insulator-metal capacitor structures. When comparing the two multilayer structures of Al2O3/HfO2/Al2O3 and HfO2/Al2O3/HfO2, the former was characterized by a large fluctuation of the leakage current and the latter had an increased leakage current at the initial stage. These results are related to the different voltage drops of each individual layer as well as the thickness impact on the behavior of the current density versus electric field.
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84.32.Tt Capacitors
77.22.Jp Dielectric breakdown and space-charge effects
77.55.F- High-permittivity capacitive films

Adsorption-controlled growth of BiMnO3 films by molecular-beam epitaxy

J. H. Lee, X. Ke, R. Misra, J. F. Ihlefeld, X. S. Xu, Z. G. Mei, T. Heeg, M. Roeckerath, J. Schubert, Z. K. Liu, J. L. Musfeldt, P. Schiffer, and D. G. Schlom

Appl. Phys. Lett. 96, 262905 (2010); http://dx.doi.org/10.1063/1.3457786 (3 pages) | Cited 4 times

Online Publication Date: 2 July 2010

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We have developed the means to grow BiMnO3 thin films with unparalleled structural perfection by reactive molecular-beam epitaxy and determined its band gap. Film growth occurs in an adsorption-controlled growth regime. Within this growth window bounded by oxygen pressure and substrate temperature at a fixed bismuth overpressure, single-phase films of the metastable perovskite BiMnO3 may be grown by epitaxial stabilization. X-ray diffraction reveals phase-pure and epitaxial films with ω rocking curve full width at half maximum values as narrow as 11 arc sec (0.003°). Optical absorption measurements reveal that BiMnO3 has a direct band gap of 1.1±0.1 eV.
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81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
77.55.Nv Multiferroic/magnetoelectric films
78.66.Nk Insulators
75.70.Ak Magnetic properties of monolayers and thin films
68.55.aj Insulators
71.20.Ps Other inorganic compounds
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