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28 Jun 2010

Volume 96, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 96, 261101 (2010); http://dx.doi.org/10.1063/1.3456618 (3 pages)

I. V. Konoplev, L. Fisher, A. W. Cross, A. D. R. Phelps, K. Ronald, and C. W. Robertson
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Band alignment at Sb2S3/Cu(In,Ga)Se2 heterojunctions and electronic characteristics of solar cell devices based on them

D. Kieven, A. Grimm, I. Lauermann, T. Rissom, and R. Klenk

Appl. Phys. Lett. 96, 262101 (2010); http://dx.doi.org/10.1063/1.3457439 (3 pages) | Cited 2 times

Online Publication Date: 28 June 2010

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Band offsets at Sb2S3/Cu(In,Ga)Se2 heterojunctions have been studied by x-ray and ultraviolet photoemission spectroscopy. The valence and conduction band offset have been estimated to −(0.6±0.3) eV and (0.2±0.3) eV, respectively. This result suggests Sb2S3 as a potential buffer layer material for chalcopyrite based solar cells. However, Cu(In,Ga)Se2/Sb2S3/ZnO solar cells have been investigated. While the open circuit voltage ranged up to ∼ 0.4–0.5 V, the short circuit current was limited to ∼ 1.8–4.9 mA/cm2. A photocurrent of about 30 mA/cm2 was found for negative bias. On the basis of bias dependent quantum efficiency measurements and calculations, limiting mechanisms are discussed.
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88.40.H- Solar cells (photovoltaics)
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
79.60.-i Photoemission and photoelectron spectra

Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires

Son T. Le, P. Jannaty, A. Zaslavsky, S. A. Dayeh, and S. T. Picraux

Appl. Phys. Lett. 96, 262102 (2010); http://dx.doi.org/10.1063/1.3457862 (3 pages) | Cited 5 times

Online Publication Date: 28 June 2010

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We report on vapor-liquid-solid growth and electrical properties of axial in situ doped p-n junction Ge sub-100 nm diameter nanowires. Room temperature four-point measurements show current rectification of two to three orders of magnitude depending on nanowire doping and diameter. We observe strong backgate control of reverse-bias current of up to three orders of magnitude and explain it by band-to-band tunneling modulated by the backgate-controlled electric field, as confirmed qualitatively via a quasi-three-dimensional Schrödinger–Poisson simulation.
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68.65.La Quantum wires (patterned in quantum wells)
81.07.Gf Nanowires
61.72.U- Doping and impurity implantation
85.40.Ry Impurity doping, diffusion and ion implantation technology
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

High thermoelectric power factor in Fe-substituted Mo3Sb7

C. Candolfi, B. Lenoir, A. Dauscher, B. Malaman, E. Guilmeau, J. Hejtmanek, and J. Tobola

Appl. Phys. Lett. 96, 262103 (2010); http://dx.doi.org/10.1063/1.3457920 (3 pages) | Cited 4 times

Online Publication Date: 28 June 2010

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Thermoelectric properties of the Mo2.57Fe0.43Sb7 compound, a ternary derivative of Mo3Sb7, are reported from 2 up to 1000 K. Even though Fe substitution keeps low electrical resistivity values, high thermopower values are achieved at high temperatures. Electronic band structure calculations show that the high thermopower observed arises from the beneficial influence of iron d-states contribution to the density of states at the Fermi level. A high power factor similar to those of the best state-of-the-art thermoelectric materials emerges which, coupled with magnetic excitations that help to keep very low thermal conductivity values, leads to a dimensionless thermoelectric figure of merit of 0.55 at 1000 K.
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72.15.Jf Thermoelectric and thermomagnetic effects
71.20.-b Electron density of states and band structure of crystalline solids
72.15.Eb Electrical and thermal conduction in crystalline metals and alloys
82.30.Hk Chemical exchanges (substitution, atom transfer, abstraction, disproportionation, and group exchange)

Bias-induced oxygen adsorption in zinc tin oxide thin film transistors under dynamic stress

Yu-Chun Chen, Ting-Chang Chang, Hung-Wei Li, Shih-Ching Chen, Jin Lu, Wan-Fang Chung, Ya-Hsiang Tai, and Tseung-Yuen Tseng

Appl. Phys. Lett. 96, 262104 (2010); http://dx.doi.org/10.1063/1.3457996 (3 pages) | Cited 21 times

Online Publication Date: 28 June 2010

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This study investigates the effects of bias-induced oxygen adsorption on the electrical characteristic instability of zinc tin oxide thin film transistors in different ambient oxygen partial pressures. When oxygen pressure is largest, the threshold voltages showed the quickest increase but the slowest recovery during the stress phase and recovery phase, respectively. This finding corresponds to the charge trapping time constant and recovery time constant, which are extracted by fitting the stretched-exponential equation and which exhibit a relationship with oxygen pressure. We suggest that the gate bias reduces the activation energy of oxygen adsorption during gate bias stress.
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85.30.Tv Field effect devices
68.55.ag Semiconductors

Intrinsic carrier mobility in amorphous In–Ga–Zn–O thin-film transistors determined by combined field-effect technique

Mutsumi Kimura, Toshio Kamiya, Takashi Nakanishi, Kenji Nomura, and Hideo Hosono

Appl. Phys. Lett. 96, 262105 (2010); http://dx.doi.org/10.1063/1.3455072 (3 pages) | Cited 10 times

Online Publication Date: 29 June 2010

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Amorphous In–Ga–Zn–O (α-IGZO) is expected for thin-film transistors (TFTs) in next-generation flat-panel displays but its intrinsic properties are not understood well and different mobility models have been applied to different films. This letter reports that a universal mobility model is obtained using a field-effect technique and capacitance-voltage method. Electrical characteristics of α-IGZO TFTs subjected to different annealing are reproduced using the mobility model and different trap densities. The present achievement will be a necessary basis to establish device and circuit simulators for α-IGZO-based electronic applications.
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85.30.Tv Field effect devices

Evidence for surface states in a single 3 nm diameter Co3O4 nanowire

Yi Sun, Ji-Yong Yang, Rui Xu, Lin He, Rui-Fen Dou, and Jia-Cai Nie

Appl. Phys. Lett. 96, 262106 (2010); http://dx.doi.org/10.1063/1.3457449 (3 pages) | Cited 3 times

Online Publication Date: 29 June 2010

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The electronic local density of states of a single Co3O4 semiconductor nanowire with the diameter of 3 nm is explored using low-temperature scanning tunneling microscopy and spectroscopy. The energy gap between the conduction band and valence band of the nanowire is about 1.7 eV, which is slightly enhanced compared to the bulk value, ∼ 1.5 eV, due to the quantum confinement effect. Two surface states are observed locating near the Fermi level in the band gap.
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68.65.La Quantum wires (patterned in quantum wells)
81.07.Gf Nanowires
81.07.Vb Quantum wires
73.20.-r Electron states at surfaces and interfaces
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
71.20.-b Electron density of states and band structure of crystalline solids

Enhanced retention characteristic of NiSi2/SiNx compound nanocrystal memory

Jin Lu (闾锦), Ting-Chang Chang (張鼎張), Yu-Ting Chen (陳侑廷), Jheng-Jie Huang, Po-Chun Yang, Shih-Ching Chen, Hui-Chun Huang, Der-Shin Gan, New-Jin Ho, Yi Shi, and Ann-Kuo Chu

Appl. Phys. Lett. 96, 262107 (2010); http://dx.doi.org/10.1063/1.3457870 (3 pages) | Cited 5 times

Online Publication Date: 29 June 2010

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The NiSi2/SiNx compound nanocrystals (CNCs) were fabricated to integrate the compound tunnel barrier into nanocrystal memory, with the inclusion of nitride traps. The analysis of high resolution transmission electron microscopy and x-ray photoelectron spectroscopy reveal that the nanocrystal is mainly composed of NiSi2 and silicon nitride with small size of 4–5 nm and high density of ∼ 1×1012 cm−2. The charge storage characteristics of the memory capacitor based on NiSi2/SiNx CNCs were investigated by capacitance-voltage measurement and the enhanced retention characteristics, which remain 71.7% ( ∼ 1.9 V) in 104 s, are clarified to be due to the compound tunnel barrier and traps in nitride.
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84.32.Tt Capacitors
84.30.Sk Pulse and digital circuits
84.60.Ve Energy storage systems, including capacitor banks

Photoexcited charge current for the presence of pure spin current

Yu Liu, Yonghai Chen, and Zhanguo Wang

Appl. Phys. Lett. 96, 262108 (2010); http://dx.doi.org/10.1063/1.3455887 (3 pages) | Cited 1 time

Online Publication Date: 29 June 2010

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The asymmetric spin distribution in k space caused by the pure spin current (PSC) can introduce a photoexcited charge current (PECC). This provides us a practical scheme for direct detection of PSC. We demonstrate theoretically that the PECC related to the PSC depends sensitively on the wave vector and spin orientation of the carriers, more important, the helicity dependence of this PECC provides us a way to refine it from the helicity independent background current by tuning the polarized laser beams from left to right circular polarization.
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72.25.Dc Spin polarized transport in semiconductors

The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Kwang-Hee Lee, Wan-Joo Maeng, Hyun-Suk Kim, Eok Su Kim, Kyung-Bae Park, Jong-Baek Seon, Woong Choi, Myung Kwan Ryu, and Sang Yoon Lee

Appl. Phys. Lett. 96, 262109 (2010); http://dx.doi.org/10.1063/1.3435482 (3 pages) | Cited 27 times

Online Publication Date: 29 June 2010

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The stability of hafnium indium zinc oxide thin film transistors under negative bias stress with simultaneous exposure to white light was evaluated. Two different inverted staggered bottom gate devices, each with a silicon oxide and a silicon nitride passivation, were compared. The latter exhibits higher field effect mobility but inferior subthreshold swing, and undergoes more severe shifts in threshold voltage (VT) during negative bias illumination stress. The time evolution of VT fits the stretched exponential equation, which implies that hydrogen incorporation during the nitride growth has generated bulk defects within the semiconductor and/or at the semiconductor/gate dielectric interface.
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85.30.Tv Field effect devices
85.40.-e Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
42.72.-g Optical sources and standards

Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

Min-Chen Chen, Ting-Chang Chang, Chih-Tsung Tsai, Sheng-Yao Huang, Shih-Ching Chen, Chih-Wei Hu, Simon M. Sze, and Ming-Jinn Tsai

Appl. Phys. Lett. 96, 262110 (2010); http://dx.doi.org/10.1063/1.3456379 (3 pages) | Cited 30 times

Online Publication Date: 29 June 2010

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The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 102 with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode.
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85.30.Hi Surface barrier, boundary, and point contact devices
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

Crystallographic orientation engineering in silicon-on-insulator substrates

T. Signamarcheix, B. Biasse, A.-M. Papon, E. Nolot, F. Mazen, J. Leveneur, O. Faynot, L. Clavelier, and B. Ghyselen

Appl. Phys. Lett. 96, 262111 (2010); http://dx.doi.org/10.1063/1.3459966 (3 pages) | Cited 2 times

Online Publication Date: 1 July 2010

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A bilayer silicon-on-insulator film was engineered to locally convert the crystallographic orientation from (100) to (110). The initial bilayer film is composed of a first 50 nm thick (110) oriented Si surface layer, above a second 20 nm thick (100) oriented Si underlayer. The bilayer film was elaborated using hydrophobic bonding to ensure an atomic contact between the two layers without any intermediate oxide. A local and deep-amorphization was developed by ion implantation to amorphize the (100) oriented Si underlayer, conserving also a partially crystalline (110) oriented surface layer. After such a deep amorphization, a solid phase epitaxy regrowth was performed at 900 °C. Transmission electron microscopy observations confirm that the partially crystalline surface layer acts as a seed for the epitaxial regrowth of the amorphized areas through the hydrophobic bonding interface. Thus, the orientation is locally converted from (100) to (110) in the underlayer, which could lead to the elaboration of hybrid films over a continuous insulating oxide that are mandatory for high performance electronic devices.
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68.55.ag Semiconductors
61.43.-j Disordered solids
68.55.J- Morphology of films

Direct-search deep level photothermal spectroscopy: An enhanced reliability method for overlapped semiconductor defect state characterization

Jun Xia and Andreas Mandelis

Appl. Phys. Lett. 96, 262112 (2010); http://dx.doi.org/10.1063/1.3458827 (3 pages) | Cited 1 time

Online Publication Date: 1 July 2010

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A method for resolving highly overlapped defects in rate-window analysis is proposed. This method offers high defect-state characterization reliability because it is based on direct multiparameter fitting of deep level photothermal spectra using combined temperature and frequency scans. Two direct search optimization algorithms are utilized as follows: the genetic algorithm for a search of possible solution areas and the pattern search algorithm for a refined search of global minimum. Four defect levels are identified using this technique.
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79.10.Ca Deep-level photothermal spectroscopy
07.60.-j Optical instruments and equipment

Different nonvolatile memory effects in epitaxial Pt/PbZr0.3Ti0.7O3/LSCO heterostructures

Jinsik Choi, Jin-Soo Kim, Inrok Hwang, Sahwan Hong, Ik-Su Byun, Seung-Woong Lee, Sung-Oong Kang, and Bae Ho Park

Appl. Phys. Lett. 96, 262113 (2010); http://dx.doi.org/10.1063/1.3460141 (3 pages) | Cited 6 times

Online Publication Date: 2 July 2010

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We found different nonvolatile memory effects between ferroelectric and resistive switching in Pt/PbZr0.3Ti0.7O3(PZT)/La0.5Sr0.5CoO3 (LSCO) heterostructures, depending on thickness of epitaxial PZT films. As the film thickness decreased below 34 nm, leakage and/or tunneling currents increased and hindered ferroelectric switching of films; alternatively, bipolar resistive switching was observed. Analysis using fitting plot on resistive switching behaviors suggested that variable Schottky barrier at the interface between Pt electrode and the film may be responsible for the different nonvolatile memory switching.
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85.50.Gk Non-volatile ferroelectric memories
73.30.+y Surface double layers, Schottky barriers, and work functions
84.30.Sk Pulse and digital circuits
77.80.Fm Switching phenomena

Control of transmission in disordered graphene nanojunctions through stochastic resonance

Luo-Luo Jiang, Liang Huang, Rui Yang, and Ying-Cheng Lai

Appl. Phys. Lett. 96, 262114 (2010); http://dx.doi.org/10.1063/1.3460291 (3 pages) | Cited 2 times

Online Publication Date: 2 July 2010

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We investigate electronic transport in graphene nanojunctions and find that the transmission (or the conductance) can exhibit a nonmonotonic behavior with respect to variation in the strength of disorder, mimicking a stochastic resonance. The general setting for this remarkable phenomenon is where the graphene device possesses localized states in the absence of disorder, i.e., the localized edge states specific to graphene. A small amount of disorder can then break the localization and lead to an enhancement in the transmission. For strong disorder, Anderson localization [ Phys. Rev. 109, 1492 (1958) ] sets in, causing the transmission to decrease. The phenomenon is robust and can occur with or without magnetic field.
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73.63.Bd Nanocrystalline materials
73.40.-c Electronic transport in interface structures
73.22.Pr Electronic structure of graphene
73.20.Fz Weak or Anderson localization
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