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28 Jun 2010

Volume 96, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 96, 261101 (2010); http://dx.doi.org/10.1063/1.3456618 (3 pages)

I. V. Konoplev, L. Fisher, A. W. Cross, A. D. R. Phelps, K. Ronald, and C. W. Robertson
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Droplet actuation on a liquid layer due to thermocapillary motion: Shape effect

Ehsan Yakhshi-Tafti, Hyoung J. Cho, and Ranganathan Kumar

Appl. Phys. Lett. 96, 264101 (2010); http://dx.doi.org/10.1063/1.3456391 (3 pages) | Cited 3 times

Online Publication Date: 30 June 2010

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In the thermocapillary migration of droplets on the free surface of immiscible liquids, we observe that the lens-shaped drops move from warm toward cooler regions while spherical drops move in the opposite direction. We explain this dual behavior using an analysis of surface deformation and velocity profiles of thin liquid layers subject to a lateral thermal gradient. Liquid platforms allow thermocapillary transport of drops with higher migration speeds than solid substrates and lower internal temperature fluctuation. Such conditions may be exploited in biochemical microsystems where droplet evaporation, contamination, and surface pinning need to be avoided.
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47.55.dm Thermocapillary effects

Drain current modulation in a nanoscale field-effect-transistor channel by single dopant implantation

B. C. Johnson, G. C. Tettamanzi, A. D. C. Alves, S. Thompson, C. Yang, J. Verduijn, J. A. Mol, R. Wacquez, M. Vinet, M. Sanquer, S. Rogge, and D. N. Jamieson

Appl. Phys. Lett. 96, 264102 (2010); http://dx.doi.org/10.1063/1.3458783 (3 pages) | Cited 6 times

Online Publication Date: 30 June 2010

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We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial for overcoming dopant number variability in present nanoscale devices and for exploiting single atom degrees of freedom. The two main ion stopping processes that induce drain current modulation are examined. We employ 500 keV He ions, in which electronic stopping is dominant, leading to discrete increases in drain current and 14 keV P dopants for which nuclear stopping is dominant leading to discrete decreases in drain current.
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85.30.Tv Field effect devices
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