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28 Jun 2010

Volume 96, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 96, 261101 (2010); http://dx.doi.org/10.1063/1.3456618 (3 pages)

I. V. Konoplev, L. Fisher, A. W. Cross, A. D. R. Phelps, K. Ronald, and C. W. Robertson
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Adiabatic embedment of nanomechanical resonators in photonic microring cavities

Chi Xiong, Wolfram Pernice, Mo Li, Michael Rooks, and Hong X. Tang

Appl. Phys. Lett. 96, 263101 (2010); http://dx.doi.org/10.1063/1.3458692 (3 pages) | Cited 3 times

Online Publication Date: 28 June 2010

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We report a circuit cavity optomechanical system in which a nanomechanical resonator is adiabatically embedded inside an optical ring resonator with ultralow transition loss. The nanomechanical device forms part of the top layer of a horizontal silicon slot ring resonator, which enables dispersive coupling to the dielectric substrate via a tapered nanogap. Our measurements show nearly uncompromised optical quality factors (Q) after the release of mechanical beam.
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42.79.-e Optical elements, devices, and systems
07.10.Cm Micromechanical devices and systems

Nanofluidic diode in a suspended nanoparticle crystal

Yinhua Lei, Wei Wang, Wengang Wu, and Zhihong Li

Appl. Phys. Lett. 96, 263102 (2010); http://dx.doi.org/10.1063/1.3456563 (3 pages) | Cited 2 times

Online Publication Date: 28 June 2010

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This work demonstrates a nanofluidic diode in a suspended nanoparticle crystal (S-NPC) constructed by sequentially packing hydroxyl-modified and amino-modified nanoparticles into a microfabricated silicon micropore. Current rectification in this nanofluidic diode comes from the asymmetric surface charge polarities along the nanochannel network inside the nanoparticle crystal. The maximum current rectification ratio was about 48 for the 173 nm S-NPC nanofluidic diode and the maximum forward current was larger than 700 nA at 3 V bias. Since it is inexpensive, easy to manufacture, and the surface charge properties are easily formed, having excellent electrical performance, this S-NPC nanofluidic diode holds application for biosensors.
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47.61.Fg Flows in micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS)
07.10.Cm Micromechanical devices and systems
47.85.Np Fluidics

Anisotropic and enhanced absorptive nonlinearities in a macroscopic film induced by aligned gold nanorods

Jiafang Li, Siyun Liu, Ye Liu, Fei Zhou, and Zhi-Yuan Li

Appl. Phys. Lett. 96, 263103 (2010); http://dx.doi.org/10.1063/1.3458693 (3 pages) | Cited 10 times

Online Publication Date: 29 June 2010

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Anisotropic and enhanced nonlinear absorption (NLA) has been observed from aligned gold nanorods (GNRs) embedded in a poly(vinyl alcohol) film, which was realized by a stretched-film method. Open-aperture Z-scan experiments revealed that the stretch process enhanced the NLA coefficient by approximately nine times and increased the anisotropic factor of NLA to ∼ 20. The enhancement in the NLA coefficient reached as high as ∼ 91 times after increasing the concentration of GNRs by four times and this is attributed to the plasmonic interaction between densely packed GNRs.
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78.67.Qa Nanorods
78.55.Hx Other solid inorganic materials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.22.Lp Collective excitations

Hydrothermal synthesis of ordered single-crystalline rutile TiO2 nanorod arrays on different substrates

Hong-En Wang, Zhenhua Chen, Yu Hang Leung, Chunyan Luan, Chaoping Liu, Yongbing Tang, Ce Yan, Wenjun Zhang, Juan Antonio Zapien, Igor Bello, and Shuit-Tong Lee

Appl. Phys. Lett. 96, 263104 (2010); http://dx.doi.org/10.1063/1.3442913 (3 pages) | Cited 22 times

Online Publication Date: 29 June 2010

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We report the mild hydrothermal synthesis of single-crystalline rutile TiO2 nanorod arrays (NRAs). The method reported here shows great versatility and can be used to grow TiO2 NRAs on a large diversity of substrates including Si, Si/SiO2, sapphire, Si pillars, and fluorine doped tin oxide (FTO)-covered glass. The average diameter and length of the nanorods prepared at typical conditions are ∼ 60 nm and 400 nm, respectively. Dye-sensitized solar cells assembled with the TiO2 NRAs grown on the FTO-covered glass as photoanode were prepared with a photoconversion efficiency of ∼ 1.10%.
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81.07.Bc Nanocrystalline materials
88.40.H- Solar cells (photovoltaics)
68.65.-k Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties

A simple alcohol-chemical vapor deposition synthesis of single-layer graphenes using flash cooling

Yasumitsu Miyata, Keiichi Kamon, Kazunori Ohashi, Ryo Kitaura, Masamichi Yoshimura, and Hisanori Shinohara

Appl. Phys. Lett. 96, 263105 (2010); http://dx.doi.org/10.1063/1.3458797 (3 pages) | Cited 18 times

Online Publication Date: 29 June 2010

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We report the synthesis of single-layer graphenes from ethanol using, what we call, “flash cooling” just after chemical vapor deposition. The single-layer graphenes synthesized are high-quality and several micrometers in grain size as revealed by Raman spectroscopy. Detailed comparison of the cooling processes suggests that the single-layer graphene growth does not occur during the carbon precipitation but rather stems from surface diffusions of carbon on a nickel substrate. Because of the present simple and easiness for the large-scale synthesis under an inert gas atmosphere and at atmospheric pressure, the present method can easily be applied for the future large-scale and low-cost graphene production.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
78.30.Na Fullerenes and related materials
68.55.ap Fullerenes
81.05.ue Graphene
81.30.Mh Solid-phase precipitation

Anisotropic surface plasmon excitation in Au/silica nanowire

Chien-Ting Wu, Ming-Wen Chu, Sheng-Bo Wang, Ming-Shien Hu, Kuei-Hsien Chen, Li-Chyong Chen, Chun-Wei Chen, and Cheng-Hsuan Chen

Appl. Phys. Lett. 96, 263106 (2010); http://dx.doi.org/10.1063/1.3456529 (3 pages) | Cited 1 time

Online Publication Date: 29 June 2010

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The surface plasmon (SP) excitations of gold/silica nanowire, investigated by electron energy-loss spectroscopy in conjunction with scanning transmission electron microscopy, are found to be anisotropic with stronger SP intensities observed along the transverse direction of the nanowire. This indicates that the charge carriers generated near the surface of the nanowires by the decay of SP resonance play a significant role to the enhanced photoconductivity. This conclusion is reaffirmed by the polarization dependent photoconductivity measurement.
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73.22.Lp Collective excitations
71.35.-y Excitons and related phenomena
79.20.Uv Electron energy loss spectroscopy
72.40.+w Photoconduction and photovoltaic effects

Current anisotropy of carbon nanotube diodes: Voltage and work function dependence

David J. Perello, Seong Chu Lim, Seung Jin Chae, Innam Lee, Moon. J. Kim, Young Hee Lee, and Minhee Yun

Appl. Phys. Lett. 96, 263107 (2010); http://dx.doi.org/10.1063/1.3458818 (3 pages)

Online Publication Date: 29 June 2010

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Here, we report a performance analysis on carbon nanotube (CNT) Schottky diodes using source-drain current anisotropy. An analytical model is derived based on thermionic field emission and used to correlate experimental data from Pd–Hf, Ti–Hf, Cr–Hf, Ti–Cr, and Pd–Au mixed metal devices fabricated on one single 6 mm long CNT. Results suggest that the difference in work functions of the two contact-metals, and not a dominant Schottky contact, determines diode performance. Results are further applied and demonstrated in a reversible polarity diode.
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85.30.Hi Surface barrier, boundary, and point contact devices
85.35.Kt Nanotube devices

Nanoscale modulation of electronic states across unit cell steps on the surface of an epitaxial colossal magnetoresistance manganite film

Abhimanyu Rana, Kashinath Bogle, Onkar Game, Shankar Patil, Nagarajan Valanoor, and Satishchandra Ogale

Appl. Phys. Lett. 96, 263108 (2010); http://dx.doi.org/10.1063/1.3455886 (3 pages) | Cited 2 times

Online Publication Date: 30 June 2010

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The nature of electronic states near the edge of unit cell steps on the surface of epitaxial La0.7Sr0.3MnO3 (LSMO) thin films grown by real-time reflection high energy electron diffraction monitored pulsed laser deposition is examined by scanning tunneling microscopy and scanning tunneling spectroscopy techniques. It is observed that the electronic states are strongly modulated near the step edge with considerably high gap at the edge and low gap on the terrace. This modulation weakens at low temperature. The temperature evolution of the density of states and the nature of gap in deep metallic state of LSMO are also discussed.
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75.47.Gk Colossal magnetoresistance
73.20.At Surface states, band structure, electron density of states
81.15.Fg Pulsed laser ablation deposition
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
75.50.Kj Amorphous and quasicrystalline magnetic materials
68.55.-a Thin film structure and morphology
75.70.-i Magnetic properties of thin films, surfaces, and interfaces

Nanostructured interfaces in polymer solar cells

W. Wiedemann, L. Sims, A. Abdellah, A. Exner, R. Meier, K. P. Musselman, J. L. MacManus-Driscoll, P. Müller-Buschbaum, G. Scarpa, P. Lugli, and L. Schmidt-Mende

Appl. Phys. Lett. 96, 263109 (2010); http://dx.doi.org/10.1063/1.3458809 (3 pages) | Cited 15 times

Online Publication Date: 30 June 2010

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The morphology in organic photovoltaics plays a key role in determining the device efficiency. We propose a method to fabricate bilayer devices with controlled nanostructured interfaces by combining nanoimprinting and lamination techniques. This technique allows us to achieve a network structure of donor-acceptor material with a ∼ 80 nm periodicity and ∼ 40 nm width. These structures have an abrupt interface between the donor and acceptor materials and show an increased effective interfacial area and photovoltaic performance compared to bilayer solar cells. In contrast to blend films, they will allow an in depth analysis of the influence of morphology on interfacial physical processes.
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88.40.H- Solar cells (photovoltaics)

Ambipolar graphene field effect transistors by local metal side gates

J. F. Tian, L. A. Jauregui, G. Lopez, H. Cao, and Y. P. Chen

Appl. Phys. Lett. 96, 263110 (2010); http://dx.doi.org/10.1063/1.3459136 (3 pages) | Cited 4 times

Online Publication Date: 1 July 2010

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We demonstrate ambipolar graphene field effect transistors individually controlled by local metal side gates. The side gated field effect can have on/off ratio comparable with that of the global back gate, and can be tuned in a large range by the back gate and/or a second side gate. We also find that the side gated field effect is significantly stronger by electrically floating the back gate compared to grounding the back gate, consistent with the finding from electrostatic simulation.
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85.30.Tv Field effect devices
85.35.-p Nanoelectronic devices

Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators

H. Bola George, David P. Hoogerheide, Charbel S. Madi, David C. Bell, Jene A. Golovchenko, and Michael J. Aziz

Appl. Phys. Lett. 96, 263111 (2010); http://dx.doi.org/10.1063/1.3441406 (3 pages) | Cited 3 times

Online Publication Date: 1 July 2010

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We report the closure of nanopores to single-digit nanometer dimensions by ion sculpting in a range of amorphous materials including insulators (SiO2 and SiN), semiconductors (a-Si), and metallic glasses (Pd80Si20)—the building blocks of a single-digit nanometer electronic device. Ion irradiation of nanopores in crystalline materials (Pt and Ag) does not cause nanopore closure. Ion irradiation of c-Si pores below 100 °C and above 600 °C, straddling the amorphous-crystalline dynamic transition temperature, yields closure at the lower temperature but no mass transport at the higher temperature. Ion beam nanosculpting appears to be restricted to materials that either are or become amorphous during ion irradiation.
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61.80.Jh Ion radiation effects
61.82.Fk Semiconductors
61.82.Bg Metals and alloys
61.46.-w Structure of nanoscale materials
61.43.Gt Powders, porous materials

Nanoscale space charge generation in local oxidation nanolithography

Marco Chiesa and Ricardo Garcia

Appl. Phys. Lett. 96, 263112 (2010); http://dx.doi.org/10.1063/1.3459976 (3 pages) | Cited 2 times

Online Publication Date: 1 July 2010

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We have measured the surface potential and the space charge generated during the first stages of atomic force microscopy field-induced oxidation. Space charge densities are about 1017 cm−3 for oxidation times below 10 ms. In a dry atmosphere, the surface potential is negative. However, in humid air the surface potential could be either positive or negative. This effect is attributed to a screening effect of the water molecules. These results explain and support the use of local oxidation patterns as templates for building molecular architectures. They also establish the space charge build up as an intrinsic feature in local oxidation experiments.
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81.16.Nd Micro- and nanolithography
81.16.Ta Atom manipulation
77.22.Jp Dielectric breakdown and space-charge effects

Phonon wave-packet interference and phonon tunneling based energy transport across nanostructured thin films

Z. T. Tian, B. E. White, Jr., and Y. Sun

Appl. Phys. Lett. 96, 263113 (2010); http://dx.doi.org/10.1063/1.3458831 (3 pages) | Cited 7 times

Online Publication Date: 1 July 2010

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The molecular dynamics based phonon wave-packet technique is used to study phonon transport across mass-mismatched fcc thin films. Transport behavior of normally incident longitudinal acoustic phonon wave packets with wave vectors ranging in magnitude from 2% to 50% of the 〈100〉 first Brillouin zone boundary is examined as a function of thin film thickness when the phonon mean free path exceeds film thickness. The results indicate that for thin film to bulk solid mass ratios up to a factor of 6, the transmission of energy through the thin film can be well described by treating the thin film as a bulk solid.
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63.22.-m Phonons or vibrational states in low-dimensional structures and nanoscale materials

Simultaneous force and current mapping of the Si(111)-(7×7) surface by dynamic force microscopy

Yoshiaki Sugimoto, Insook Yi, Ken-ichi Morita, Masayuki Abe, and Seizo Morita

Appl. Phys. Lett. 96, 263114 (2010); http://dx.doi.org/10.1063/1.3457997 (3 pages) | Cited 4 times

Online Publication Date: 2 July 2010

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We simultaneously obtain spatial maps of the interaction force and current between conductive tips and the Si(111)-(7×7) surface. The difference in the topographic profiles between atomic force microscopy and scanning tunneling microscopy is clearly visualized. We observe a current drop in the region where the chemical bonding force between the tip and surface atoms becomes significant. The peak values of the conductance above adatom sites are in good agreement with the value previously obtained by the theoretical simulation.
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73.25.+i Surface conductivity and carrier phenomena
72.80.Cw Elemental semiconductors

High extraction efficiency GaN-based light-emitting diodes on embedded SiO2 nanorod array and nanoscale patterned sapphire substrate

Hung-Wen Huang, Jhi-Kai Huang, Shou-Yi Kuo, Kang-Yuan Lee, and Hao-Chung Kuo

Appl. Phys. Lett. 96, 263115 (2010); http://dx.doi.org/10.1063/1.3456385 (3 pages) | Cited 6 times

Online Publication Date: 2 July 2010

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In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.
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85.60.Jb Light-emitting devices
81.16.Nd Micro- and nanolithography
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