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28 Jun 2010

Volume 96, Issue 26, Articles (26xxxx)

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Appl. Phys. Lett. 96, 261101 (2010); http://dx.doi.org/10.1063/1.3456618 (3 pages)

I. V. Konoplev, L. Fisher, A. W. Cross, A. D. R. Phelps, K. Ronald, and C. W. Robertson
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Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering

B. Zhang, S. Shrestha, M. A. Green, and G. Conibeer

Appl. Phys. Lett. 96, 261901 (2010); http://dx.doi.org/10.1063/1.3457864 (3 pages) | Cited 8 times

Online Publication Date: 28 June 2010

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A simple and silicon process-compatible technique is reported for the synthesis of Ge nanocrystals (Ge-ncs) at low temperatures below 400 °C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window between 350 and 420 °C. The underlying mechanism has been explained by a competitive process between Volmer–Weber growth and oxidation reaction. We further implemented this technique in the fabrication of multilayered Ge-ncs which exhibited controllable crystallite size with high crystallization quality. The low temperature technique developed in this work would allow production of Ge-ncs and relative devices on low cost substrates, such as glass.
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81.07.Bc Nanocrystalline materials
81.15.Cd Deposition by sputtering
68.55.A- Nucleation and growth
81.65.Mq Oxidation
68.65.Ac Multilayers
82.45.Yz Nanostructured materials in electrochemistry

Diaspore crystal structure and compressibility at high pressures and high temperature

Ming Li, Karim Snoussi, Lixin Li, Huixin Wang, Wuming Yang, and Chunxiao Gao

Appl. Phys. Lett. 96, 261902 (2010); http://dx.doi.org/10.1063/1.3457919 (3 pages)

Online Publication Date: 28 June 2010

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We have determined the unit-cell parameters of diaspore α-AlO(OH) at high pressures (13.5–27.8 GPa) and at high temperature (1900 K). Experimental data are compared with the theoretically predicted crystal structure variations derived from density functional theory (DFT) calculations. The experimental analysis establishes that the a axial direction is more compressible than the b and c axial directions in the low-pressure range (13.5–18 GPa) and at 1900 K, whereas all three directions show similar behaviors in the high-pressure range (18–27.8 GPa). The diaspore isothermal bulk modulus KT values are 137.6 GPa, 124.8 GPa, and 141.3 GPa, respectively, at 300 K, at 1900 K, and again at 300 K after quenching. By comparison, the diaspore isothermal bulk modulus KT computed at 300 K and at ambient pressure in the framework of the plane-wave pseudopotential approach is equal to 129.3 GPa.
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81.40.Lm Deformation, plasticity, and creep
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.de Elastic moduli
81.40.Gh Other heat and thermomechanical treatments

In situ evolution of stress gradients in Cu films induced by capping layers

Conal E. Murray, Paul R. Besser, Christian Witt, and Michael Toney

Appl. Phys. Lett. 96, 261903 (2010); http://dx.doi.org/10.1063/1.3458864 (3 pages)

Online Publication Date: 29 June 2010

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Depth-dependent stress distributions within copper films possessing capping layers were measured during in situ thermal anneals. Glancing-incidence x-ray diffraction measurements of SiCxNyHz capped Cu films revealed that a strain gradient near the cap/Cu interface, created by constraint imposed by the cap during its deposition process, decreased as the sample temperature increased to 350 °C. Although the increase in sample temperature allowed Cu to approach its equilibrium lattice spacing at the cap deposition temperature and minimize the corresponding stress gradient, both the gradient and concomitant increase in residual bulk stress of the Cu film reappeared after cooling to room temperature.
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85.40.Ls Metallization, contacts, interconnects; device isolation
68.60.-p Physical properties of thin films, nonelectronic
68.55.at Other materials

Composition measurement of the Ni-silicide transient phase by atom probe tomography

K. Hoummada, I. Blum, D. Mangelinck, and A. Portavoce

Appl. Phys. Lett. 96, 261904 (2010); http://dx.doi.org/10.1063/1.3457995 (3 pages) | Cited 8 times

Online Publication Date: 29 June 2010

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The transient phase observed during the reaction of a Ni(Pt) alloy with a (001)Si substrate is studied using in situ x-ray diffraction and atom probe tomography microscopy. This transient phase exhibits a diffraction peak at 47°, and is found to have a uniform composition corresponding to Ni0.6Si0.4. During the reaction, it is located between a δ-Ni2Si layer and a thin (nanocrystalline or amorphous) NiSi layer in contact with Si. The Pt atoms are found in the δ-Ni2Si grain boundaries, while they have not been detected in the NiSi layer.
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68.35.Fx Diffusion; interface formation
82.80.-d Chemical analysis and related physical methods of analysis
61.72.Mm Grain and twin boundaries
68.55.at Other materials

Evidence of graphene-like electronic signature in silicene nanoribbons

Paola De Padova, Claudio Quaresima, Carlo Ottaviani, Polina M. Sheverdyaeva, Paolo Moras, Carlo Carbone, Dinesh Topwal, Bruno Olivieri, Abdelkader Kara, Hamid Oughaddou, Bernard Aufray, and Guy Le Lay

Appl. Phys. Lett. 96, 261905 (2010); http://dx.doi.org/10.1063/1.3459143 (3 pages) | Cited 54 times

Online Publication Date: 30 June 2010

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We report on the electronic properties of straight, 1.6 nm wide, silicene nanoribbons on Ag(110), arranged in a one-dimensional grating with a pitch of 2 nm, whose high-resolution scanning tunneling microscopy images reveal a honeycomb geometry. Angle-resolved photoemission shows quantum confined electronic states of one-dimensional character. The silicon band dispersion along the direction of the nanoribbons suggests a behavior analogous to the Dirac cones of graphene on different substrates.
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73.22.-f Electronic structure of nanoscale materials and related systems
61.46.-w Structure of nanoscale materials
79.60.Jv Interfaces; heterostructures; nanostructures

MN+1AXN(M = Ti,A = Al,X = H) phase class materials with hydrogen: Ti4AlH3 and Ti3AlH2

M. Ramzan and R. Ahuja

Appl. Phys. Lett. 96, 261906 (2010); http://dx.doi.org/10.1063/1.3459960 (3 pages) | Cited 2 times

Online Publication Date: 30 June 2010

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To date more than 50 MAX phases known to exist but all of those are consist of nitrides or carbides. We present a modified type of these phases, Ti4AlH3 and Ti3AlH2, having hydrides in their composition, by our density functional theory (DFT) calculations. We study the structural stability, electronic structure, elastic, thermal, and mechanical properties of these materials which are comparable with well known phases: Ti3SiC2, Ti4AlN3, and Ti3AlC2. Moreover, these materials can also be studied for hydrogen storage purposes. We hope that our work will be helpful to discover the other types of such phases which are important from the technological and industrial point of view.
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62.20.de Elastic moduli
62.20.-x Mechanical properties of solids
65.40.-b Thermal properties of crystalline solids
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
61.66.Fn Inorganic compounds

Magnified hard x-ray image in one dimension

James Britten, Zhechuan Feng, and Gu Xu

Appl. Phys. Lett. 96, 261907 (2010); http://dx.doi.org/10.1063/1.3459969 (3 pages)

Online Publication Date: 30 June 2010

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The possibility of magnified x-ray imaging is explored, by the near-field attenuation of a sample intercepting a spherical wave-front, plus the beam profile modulation by Borrmann pyramid based on dynamic x-ray scattering. It is verified by experiments in one dimension as well as numerical simulation.
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07.85.-m X- and γ-ray instruments

Optical switching of a metamaterial by temperature controlling

Wan-xia Huang, Xiao-gang Yin, Cheng-ping Huang, Qian-jin Wang, Teng-fei Miao, and Yong-yuan Zhu

Appl. Phys. Lett. 96, 261908 (2010); http://dx.doi.org/10.1063/1.3458706 (3 pages) | Cited 3 times

Online Publication Date: 2 July 2010

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We have fabricated a metamaterial of metal/semiconductor/metal sandwich nanostrips structure comprising a pair of gold strips and a vanadium dioxide (VO2) strip. The optical response of the metamaterial has been studied. The results indicate the nanostructure with VO2 strips can be used as a temperature-controlling optical switch and the mechanism of this switch can be explained by the magnetic resonance.
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42.65.Pc Optical bistability, multistability, and switching, including local field effects
42.70.-a Optical materials
81.16.-c Methods of micro- and nanofabrication and processing
78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
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