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11 Jan 2010

Volume 96, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 96, 021101 (2010); http://dx.doi.org/10.1063/1.3290633 (3 pages)

Ahmet Ali Yanik, Min Huang, Alp Artar, Tsung-Yao Chang, and Hatice Altug
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A study on the temperature dependence of the threshold switching characteristics of Ge2Sb2Te5

Suyoun Lee, Doo Seok Jeong, Jeung-hyun Jeong, Wu Zhe, Young-Wook Park, Hyung-Woo Ahn, and Byung-ki Cheong

Appl. Phys. Lett. 96, 023501 (2010); http://dx.doi.org/10.1063/1.3275756 (3 pages) | Cited 6 times

Online Publication Date: 12 January 2010

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We investigated the temperature dependence of the threshold switching characteristics of a memory-type chalcogenide material, Ge2Sb2Te5. We found that the threshold voltage (Vth) decreased linearly with temperature, implying the existence of a critical conductivity of Ge2Sb2Te5 for its threshold switching. In addition, we investigated the effect of bias voltage and temperature on the delay time (tdel) of the threshold switching of Ge2Sb2Te5 and described the measured relationship by an analytic expression which we derived based on a physical model where thermally activated hopping is a dominant transport mechanism in the material.
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72.20.Ee Mobility edges; hopping transport
72.80.Ng Disordered solids
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A universal semiempirical model for the Fowler–Nordheim programming of charge trapping devices

Ravishankar Sundararaman and Sandip Tiwari

Appl. Phys. Lett. 96, 023502 (2010); http://dx.doi.org/10.1063/1.3279153 (3 pages)

Online Publication Date: 14 January 2010

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An approximate analytical solution to the dynamics of charge trapping and detrapping by Fowler–Nordheim tunneling is constructed within a simplified model that captures the essential features of the programming characteristics of tunneling devices with the fewest possible parameters. This solution is demonstrated to be an excellent fit for experimental programming characteristics of various tunneling-based nonvolatile memory devices from different laboratories including devices based on traps in silicon nitride, interface traps in silicon dioxide, and silicon nanocrystals.
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73.40.Gk Tunneling
84.30.Sk Pulse and digital circuits

Flight behavior of charged droplets in electrohydrodynamic inkjet printing

Hadi Teguh Yudistira, Vu Dat Nguyen, Prashanta Dutta, and Doyoung Byun

Appl. Phys. Lett. 96, 023503 (2010); http://dx.doi.org/10.1063/1.3280077 (3 pages) | Cited 6 times

Online Publication Date: 14 January 2010

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Flight behaviors of charged droplets are presented for electrohydrodynamic (EHD) inkjet printing. Three different kinds of EHD spraying techniques, pulsed dc, ac, and single potential (SP) ac, have been investigated and both conductive and dielectric target surfaces were considered. Experimental results show that the flight paths of charged droplets may deviate from their regular straight route, i.e., directly from the nozzle to the substrate. Depending on the droplet charge and applied electric field, droplets may deflect, reflect, or retreat to the meniscus. We can solve these drawbacks by SP EHD printing.
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47.55.D- Drops and bubbles
47.65.-d Magnetohydrodynamics and electrohydrodynamics
81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

Off-state and turn-on characteristics of solid electrolyte switch

Y. Tsuji, T. Sakamoto, N. Banno, H. Hada, and M. Aono

Appl. Phys. Lett. 96, 023504 (2010); http://dx.doi.org/10.1063/1.3285177 (3 pages) | Cited 14 times

Online Publication Date: 15 January 2010

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We have investigated off-state and turn-on characteristics of a Ta2O5-based solid-electrolyte switch, the resistance of which changes when the metallic current path is formed in the solid-electrolyte. The turn-on voltages are found to vary widely even when the switches are in an off-state with similar resistance. The variation is induced by the residual metal with different shapes that remains in the solid-electrolyte after a switch is turned off. The residual metal with a sharp point enhances the electrochemical reaction, resulting in the turn-on voltage lowering. We also developed a screening scheme to reduce the variation of the turn-on voltages.
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82.45.Gj Electrolytes
84.32.Dd Connectors, relays, and switches
82.45.Fk Electrodes
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