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11 Jan 2010

Volume 96, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 96, 021101 (2010); http://dx.doi.org/10.1063/1.3290633 (3 pages)

Ahmet Ali Yanik, Min Huang, Alp Artar, Tsung-Yao Chang, and Hatice Altug
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On the possibility of a shunt-stabilized superlattice terahertz emitter

Huidong Xu and Stephen W. Teitsworth

Appl. Phys. Lett. 96, 022101 (2010); http://dx.doi.org/10.1063/1.3291614 (3 pages)

Online Publication Date: 11 January 2010

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High field electronic transport through a strongly coupled superlattice (SL) with a shunting side layer is numerically studied using a drift-diffusion model that includes both vertical and lateral dynamics. The bias voltage corresponds to an average electric field in the negative differential conductivity region of the intrinsic current-field curve of the SL, a condition that generally implies space charge instability. Key structural parameters associated with both the shunt layer and SL are identified for which the shunt layer stabilizes a uniform electric field profile. These results support the possibility to realize a SL-based terahertz oscillator with a carefully designed structure.
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73.21.Cd Superlattices
72.20.-i Conductivity phenomena in semiconductors and insulators
72.25.-b Spin polarized transport

Metal-insulator transition in epitaxial V1−xWxO2(0 ≤ x ≤ 0.33) thin films

Keisuke Shibuya, Masashi Kawasaki, and Yoshinori Tokura

Appl. Phys. Lett. 96, 022102 (2010); http://dx.doi.org/10.1063/1.3291053 (3 pages) | Cited 12 times

Online Publication Date: 12 January 2010

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We have fabricated epitaxial V1−xWxO2(0 ≤ x ≤ 0.33) thin films on TiO2 (001) substrates. The metal-insulator transition temperature of VO2 is systematically reduced by W doping, and eventually a metallic ground state is realized at 0.08 ≤ x ≤ 0.09. Tiny resistivity upturn around 50 K observed for these films suggests an electronic phase separation between a majority metallic matrix and minority insulating puddles. With further increasing x above 0.095, another insulating phase appears while increasing the metal-insulator transition temperature. The elucidated phase diagram gives basic knowledge for devices based on Mott transition.
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71.30.+h Metal-insulator transitions and other electronic transitions
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
81.30.Bx Phase diagrams of metals, alloys, and oxides
61.72.up Other materials
73.61.Ng Insulators
72.60.+g Mixed conductivity and conductivity transitions

Strong localization effect in magnetic two-dimensional hole systems

U. Wurstbauer, S. Knott, A. Zolotaryov, D. Schuh, W. Hansen, and W. Wegscheider

Appl. Phys. Lett. 96, 022103 (2010); http://dx.doi.org/10.1063/1.3291673 (3 pages) | Cited 2 times

Online Publication Date: 12 January 2010

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We report an extensive study of the magnetotransport properties of magnetically doped two-dimensional hole systems. Inverted manganese modulation doped InAs quantum wells with localized manganese ions providing a magnetic moment of S = 5/2 were grown by molecular beam epitaxy. Strong localization effect found in low-field magnetotransport measurements on these structures can either be modified by the manganese doping density or by tuning the two-dimensional hole density p via field effect. The data reveal that the ratio between p and manganese ions inside or in close vicinity to the channel enlarges the strong localization effect. Moreover, asymmetric broadening of the doping layer due to manganese segregation is significantly influenced by strain in the heterostructure.
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72.20.My Galvanomagnetic and other magnetotransport effects
75.30.Cr Saturation moments and magnetic susceptibilities
61.72.U- Doping and impurity implantation
81.07.St Quantum wells
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Determination of the minority carrier diffusion length in compositionally graded Cu(In,Ga)Se2 solar cells using electron beam induced current

Gregory Brown, Vladimir Faifer, Alex Pudov, Sergey Anikeev, Eugene Bykov, Miguel Contreras, and Junqiao Wu

Appl. Phys. Lett. 96, 022104 (2010); http://dx.doi.org/10.1063/1.3291046 (3 pages) | Cited 10 times

Online Publication Date: 14 January 2010

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A method is proposed and tested which allows for the accurate determination of the carrier collection efficiency and minority carrier diffusion length in Cu(In,Ga)Se2 solar cells using energy dependent electron beam induced current. Gallium composition gradients across the film thickness introduce quasielectric fields that are found to improve collection efficiency when they are located toward the rear of the sample. The quasielectric fields are also shown to reduce the influence of back surface recombination. The strengths and limitations of this technique are discussed and compared with external quantum efficiency measurements.
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88.40.jn Thin film Cu-based I-III-VI2 solar cells

Numerical approach for retention characteristics of double floating-gate memories

Tetsufumi Tanamoto and Kouichi Muraoka

Appl. Phys. Lett. 96, 022105 (2010); http://dx.doi.org/10.1063/1.3285170 (3 pages) | Cited 3 times

Online Publication Date: 15 January 2010

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We report on a numerical investigation in which memory characteristics of double floating-gate (DFG) structure were compared to those of the conventional single floating-gate structure, including an interference effect between two cells. We found that the advantage of the DFG structure is its longer retention time and the disadvantage is its smaller threshold voltage shift. We also provide an analytical form of charging energy including the interference effect.
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84.30.Sk Pulse and digital circuits
85.30.De Semiconductor-device characterization, design, and modeling
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