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11 Jan 2010

Volume 96, Issue 2, Articles (02xxxx)

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Appl. Phys. Lett. 96, 021101 (2010); http://dx.doi.org/10.1063/1.3290633 (3 pages)

Ahmet Ali Yanik, Min Huang, Alp Artar, Tsung-Yao Chang, and Hatice Altug
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Memory effect of a single-walled carbon nanotube on nitride-oxide structure under various bias conditions

Hongsik Park, Hyunjung Shin, Jin Ho Kim, Seungbum Hong, and Jimmy Xu

Appl. Phys. Lett. 96, 023101 (2010); http://dx.doi.org/10.1063/1.3291054 (3 pages) | Cited 1 time

Online Publication Date: 11 January 2010

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We report on the memory effect of single-walled carbon nanotubes (SWNTs) placed on a nitride-oxide layer structure designed as a charge storage medium. The conductance of the SWNT was modulated by the injected charge in the nitride-oxide interface and the polarities of injected charges were then detected. A large on/off-state current ratio (>104) was obtained at a small program/erase voltage range (<3 V). We also studied the effect of a half-selected cell on the conductance of the SWNTs to identify the issues with cross-point memory architecture.
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71.20.Tx Fullerenes and related materials; intercalation compounds
73.22.-f Electronic structure of nanoscale materials and related systems
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
61.46.Fg Nanotubes

Processing and properties of centimeter-long, in-fiber, crystalline-selenium filaments

D. S. Deng, N. D. Orf, S. Danto, A. F. Abouraddy, J. D. Joannopoulos, and Y. Fink

Appl. Phys. Lett. 96, 023102 (2010); http://dx.doi.org/10.1063/1.3275751 (3 pages) | Cited 15 times

Online Publication Date: 11 January 2010

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We report on the fabrication and characterization of globally ordered crystalline selenium filaments with diameters about 200 nm and aspect ratios upwards of 105. Amorphous Se filaments are fabricated by a recently developed approach in which a thin film evolves into an ordered array of filaments in fiber. Single-crystal and polycrystalline filaments are attained with a postdrawing annealing procedure. Arrays of two-cm-long crystalline nanowires, electrically contacted to external circuitry through the fiber end facets, exhibit a two-orders-of-magnitude change in conductivity between dark and illuminated states. These results hold promise for the fabrication of filament-detector arrays that may be integrated with large-area electronics.
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68.55.ag Semiconductors
73.61.Cw Elemental semiconductors
73.63.Nm Quantum wires
73.21.Hb Quantum wires
73.40.-c Electronic transport in interface structures
72.80.Cw Elemental semiconductors

Fully inverted single-digit nanometer domains in ferroelectric films

Noureddine Tayebi, Yoshie Narui, Nathan Franklin, C. Patrick Collier, Konstantinos P. Giapis, Yoshio Nishi, and Yuegang Zhang

Appl. Phys. Lett. 96, 023103 (2010); http://dx.doi.org/10.1063/1.3280371 (3 pages) | Cited 4 times

Online Publication Date: 12 January 2010

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Achieving stable single-digit nanometer inverted domains in ferroelectric thin films is a fundamental issue that has remained a bottleneck for the development of ultrahigh density (>1 Tbit/in.2) probe-based memory devices using ferroelectric media. Here, we demonstrate that such domains remain stable only if they are fully inverted through the entire ferroelectric film thickness, which is dependent on a critical ratio of electrode size to the film thickness. This understanding enables the formation of stable domains as small as 4 nm in diameter, corresponding to 10 unit cells in size. Such domain size corresponds to 40 Tbit/in.2 data storage densities.
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77.80.Dj Domain structure; hysteresis
77.84.Cg PZT ceramics and other titanates
77.55.fg Pb(Zr,Ti)O3-based films
85.35.Kt Nanotube devices
85.50.Gk Non-volatile ferroelectric memories
84.30.Sk Pulse and digital circuits

Formation of quantum dots in single stranded DNA-wrapped single-walled carbon nanotubes

Y. F. Li, T. Kaneko, and R. Hatakeyama

Appl. Phys. Lett. 96, 023104 (2010); http://dx.doi.org/10.1063/1.3284511 (3 pages) | Cited 3 times

Online Publication Date: 12 January 2010

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The transport properties of single-stranded DNA (ssDNA) wrapped single-walled carbon nanotubes (SWNTs) are studied from low to room temperature. Atomic force microscopy reveals a regularly patterned geometry of ssDNA molecules on the surface of SWNTs. Our measurements indicate that the semiconducting behavior of SWNTs is drastically changed after ssDNA modification, showing a clear charge-transfer process at room temperature. At low temperatures single-electron tunneling features are observed up to 80 K, demonstrating clearly that quantum dots in series are created in the SWNTs due to the ssDNA wrapping.
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73.63.Fg Nanotubes
73.40.Gk Tunneling

Structural degradation mechanism of multiwalled carbon nanotubes in electrically treated field emission

Chan-Wook Baik, Jeonghee Lee, Jun Hee Choi, Insun Jung, Hye Ran Choi, Yong Wan Jin, and Jong Min Kim

Appl. Phys. Lett. 96, 023105 (2010); http://dx.doi.org/10.1063/1.3291108 (3 pages) | Cited 5 times

Online Publication Date: 12 January 2010

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Carbon nanotubes in printed field emission arrays are known to be often damaged during field emission. A high-resolution transmission electron microscopy and Raman scattering spectra suggest that the degraded structure is mainly determined by electrical treatment conditions. A nonstationary alternating-current treatment has caused emitters to be thicker and fewer with loss of crystallinity but improved the emission brightness and uniformity, while a direct-current treatment has shown little influence. The experimental observations can be quantitatively explained by the analytical estimation on the apex radius as well as the work function using the Seppen–Katamuki chart from the Fowler–Nordheim characteristics.
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71.20.Tx Fullerenes and related materials; intercalation compounds
79.70.+q Field emission, ionization, evaporation, and desorption
73.22.-f Electronic structure of nanoscale materials and related systems
78.30.-j Infrared and Raman spectra
73.30.+y Surface double layers, Schottky barriers, and work functions

Fabrication of graphene nanogap with crystallographically matching edges and its electron emission properties

H. M. Wang, Z. Zheng, Y. Y. Wang, J. J. Qiu, Z. B. Guo, Z. X. Shen, and T. Yu

Appl. Phys. Lett. 96, 023106 (2010); http://dx.doi.org/10.1063/1.3291110 (3 pages) | Cited 13 times

Online Publication Date: 12 January 2010

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We demonstrate the fabrication of graphene nanogap with crystallographically matching edges on SiO2/Si substrates by divulsion. The current-voltage measurement is then performed in a high-vacuum chamber for a graphene nanogap with few hundred nanometers separation. The parallel edges help to build uniform electrical field and allow us to perform electron emission study on individual graphene. It was found that current-voltage (I-V) characteristics are governed by the space-charge-limited flow of current at low biases while the Fowler–Nordheim model fits the I-V curves in high voltage regime. We also examined electrostatic gating effect of the vacuum electronic device. Graphene nanogap with atomically parallel edges may open up opportunities for both fundamental and applied research of vacuum nanoelectronics.
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81.16.-c Methods of micro- and nanofabrication and processing
61.48.Gh Structure of graphene
81.05.ue Graphene
73.22.Pr Electronic structure of graphene

Vertical absorption edge and temperature dependent resistivity in semihydrogenated graphene

Lei Chen, Zhongshui Ma, and C. Zhang

Appl. Phys. Lett. 96, 023107 (2010); http://dx.doi.org/10.1063/1.3292026 (3 pages) | Cited 6 times

Online Publication Date: 12 January 2010

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We show that for graphene with any finite asymmetry in the on-site energy between the two sublattices (Δ), the optical absorption edge is determined by the Δ. The universal conductance will be broken and the conductance near the band edge varies with frequency as 1/ω2. The onset conductance is σc = 2σ0 = πe2/2h, independent of the size of the band gap. The total integrated optical response is nearly conserved despite of the opening of the band gap. Moreover, near the band edge, there is a change over of the electrical resistivity from temperature independent to a linear temperature dependence.
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78.67.Wj Optical properties of graphene
73.63.-b Electronic transport in nanoscale materials and structures
71.20.Tx Fullerenes and related materials; intercalation compounds

Stuffed fullerenelike boron carbide nanoclusters

Dasari L. V. K. Prasad and Eluvathingal D. Jemmis

Appl. Phys. Lett. 96, 023108 (2010); http://dx.doi.org/10.1063/1.3280369 (3 pages)

Online Publication Date: 13 January 2010

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Viable stuffed fullerenelike boron carbide nanoclusters, C50B34, C48B36−2, and their isomers based on an icosahedral B84 fragment of elemental β-rhombohedral boron have been investigated using density functional theory calculations. The structure and the stability of these clusters are rationalized using the polyhedral skeletal electron counting and ring-cap orbital overlap compatibility rules. The curvature of the fullerene was found to play a vital role in achieving the most stable isomer C50B34(3B). The large highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) gaps, three dimensional aromaticity, and electron detachment energies support their high stability. Further, the IR and Raman active modes were recognized.
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61.46.-w Structure of nanoscale materials
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
78.30.Hv Other nonmetallic inorganics

Contact thermal resistance between individual multiwall carbon nanotubes

Juekuan Yang, Scott Waltermire, Yunfei Chen, Alfred A. Zinn, Terry T. Xu, and Deyu Li

Appl. Phys. Lett. 96, 023109 (2010); http://dx.doi.org/10.1063/1.3292203 (3 pages) | Cited 25 times

Online Publication Date: 14 January 2010

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We report on experimental measurements of contact thermal resistance between individual carbon nanotubes. Results indicate that the contact thermal conductance can increase by nearly two orders of magnitude (from 10−8 to 10−6 W/K) as the contact area increases from a cross contact to an aligned contact. Normalization with respect to the contact area leads to normalized contact thermal resistance on the order of 10−9 m2 K/W at room temperature, one order of magnitude lower than that from a molecular dynamics simulation in literature. These results should have important implications in the design of carbon nanotube-polymer composites for tunable thermal properties.
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73.40.Cg Contact resistance, contact potential
66.70.Lm Other systems such as ionic crystals, molecular crystals, nanotubes, etc.
81.07.De Nanotubes
61.48.De Structure of carbon nanotubes, boron nanotubes, and other related systems
73.63.Fg Nanotubes

Melting of Zn nanoparticles embedded in SiO2 at high temperatures: Effects on surface plasmon resonances

H. Amekura, M. Tanaka, Y. Katsuya, H. Yoshikawa, H. Shinotsuka, S. Tanuma, M. Ohnuma, Y. Matsushita, K. Kobayashi, Ch. Buchal, S. Mantl, and N. Kishimoto

Appl. Phys. Lett. 96, 023110 (2010); http://dx.doi.org/10.1063/1.3290984 (3 pages) | Cited 3 times

Online Publication Date: 14 January 2010

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Zn nanoparticles at room temperature show two absorption peaks in the near-infrared (NIR) and the ultraviolet (UV) regions, both of which satisfy the criterion of surface plasmon resonance (SPR). From x-ray diffraction at high temperatures, it was found that the Zn nanoparticles in SiO2 melt at 360–420 °C and solidify at 250–310 °C with a large temperature hysteresis. While the NIR peak disappears with melting, the UV peak shows sudden energy shift with melting but survives even after the melting. The first-principle band calculation ascribes the UV and NIR peaks to SPR-enhanced inter- and intraband transitions, respectively.
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78.68.+m Optical properties of surfaces
81.30.Fb Solidification
64.70.D- Solid-liquid transitions
78.40.-q Absorption and reflection spectra: visible and ultraviolet
78.30.-j Infrared and Raman spectra
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Photoluminescence characteristics of high quality ZnO nanowires and its enhancement by polymer covering

K. W. Liu, R. Chen, G. Z. Xing, T. Wu, and H. D. Sun

Appl. Phys. Lett. 96, 023111 (2010); http://dx.doi.org/10.1063/1.3291106 (3 pages) | Cited 29 times

Online Publication Date: 14 January 2010

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We investigated the photoluminescence (PL) properties of ZnO nanowires with and without covering with polymethyl methacrylate (PMMA). Low temperature PL spectra of as-grown ZnO nanowires are dominated by near band edge (NBE) emission due to donor bound excitons and free-to-bound recombination (FB). FB emission persists till 300 K and together with free exciton emission governs the lineshape of the PL spectra. After covering with PMMA, the integral intensity of NBE emission increases about three times, indicating significantly improved excitonic emission efficiency. A model based on surface states and energy bands theory was proposed to interpret this emission enhancement.
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78.55.Et II-VI semiconductors
71.35.-y Excitons and related phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.20.At Surface states, band structure, electron density of states
73.21.Hb Quantum wires

Synthesis and field emission properties of nanocrystalline diamond/carbon nanowall composite films

Kungen Teii and Masahiro Nakashima

Appl. Phys. Lett. 96, 023112 (2010); http://dx.doi.org/10.1063/1.3264075 (3 pages) | Cited 5 times

Online Publication Date: 14 January 2010

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Nanostructured composite films consisting of almost vertically aligned graphene layers, so-called “carbon nanowalls” (CNWs), and nanocrystalline diamond films are prepared by plasma-enhanced chemical vapor deposition. The space between the walls for the composite films is widened compared to simple CNWs by interception of in-plane continuity of the wall structures. The nucleation density of diamond is responsible for the spacing and arrangement of the walls. Field emission measurements show that the composite films have lower turn-on fields ( ∼ 1 V/μm) and larger field enhancement factors ( ∼ 4000) than simple CNWs. The results indicate that electric field screening between neighboring walls is well suppressed.
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81.16.-c Methods of micro- and nanofabrication and processing
68.55.A- Nucleation and growth
52.77.Dq Plasma-based ion implantation and deposition
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
79.70.+q Field emission, ionization, evaporation, and desorption

Disentangling mechanical and mass effects on nanomechanical resonators

R. R. Grüter, Z. Khan, R. Paxman, J. W. Ndieyira, B. Dueck, B. A. Bircher, J. L. Yang, U. Drechsler, M. Despont, R. A. McKendry, and B. W. Hoogenboom

Appl. Phys. Lett. 96, 023113 (2010); http://dx.doi.org/10.1063/1.3285169 (3 pages) | Cited 5 times

Online Publication Date: 14 January 2010

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Micro and nanomechanical resonators are powerful and label-free sensors of analytes in various environments. Their response, however, is a convolution of mass, rigidity, and nanoscale heterogeneity of adsorbates. Here we demonstrate a procedure to disentangle this complex sensor response, to simultaneously measure both mass and elastic properties of nanometer thick samples. This turns an apparent disadvantage of these resonators into a striking and unique asset, enabling them to measure more than mass alone.
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07.10.Cm Micromechanical devices and systems
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Super-resolution imaging using a three-dimensional metamaterials nanolens

B. D. F. Casse, W. T. Lu, Y. J. Huang, E. Gultepe, L. Menon, and S. Sridhar

Appl. Phys. Lett. 96, 023114 (2010); http://dx.doi.org/10.1063/1.3291677 (3 pages) | Cited 24 times

Online Publication Date: 14 January 2010

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Super-resolution imaging beyond Abbe’s diffraction limit can be achieved by utilizing an optical medium or “metamaterial” that can either amplify or transport the decaying near-field evanescent waves that carry subwavelength features of objects. Earlier approaches at optical frequencies mostly utilized the amplification of evanescent waves in thin metallic films or metal-dielectric multilayers, but were restricted to very small thicknesses (⪡λ, wavelength) and accordingly short object-image distances, due to losses in the material. Here, we present an experimental demonstration of super-resolution imaging by a low-loss three-dimensional metamaterial nanolens consisting of aligned gold nanowires embedded in a porous alumina matrix. This composite medium possesses strongly anisotropic optical properties with negative permittivity in the nanowire axis direction, which enables the transport of both far-field and near-field components with low-loss over significant distances (>6λ), and over a broad spectral range. We demonstrate the imaging of large objects, having subwavelength features, with a resolution of at least λ/4 at near-infrared wavelengths. The results are in good agreement with a theoretical model of wave propagation in anisotropic media.
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42.79.Bh Lenses, prisms and mirrors
42.30.-d Imaging and optical processing
42.70.-a Optical materials

Surface plasmon enhanced photoconductance and single electron effects in mesoporous titania nanofibers loaded with gold nanoparticles

Min-Soo Son, Ji-Eun Im, Kang-Kyun Wang, Seung-Lim Oh, Yong-Rok Kim, and Kyung-Hwa Yoo

Appl. Phys. Lett. 96, 023115 (2010); http://dx.doi.org/10.1063/1.3291052 (3 pages) | Cited 6 times

Online Publication Date: 15 January 2010

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We have synthesized mesoporous TiO2 nanofibers loaded with Au nanoparticles (MTNF-Au) and fabricated single nanofiber-based devices. MTNF-Au devices exhibited surface plasmon enhanced photoconductance under visible light, whereas MTNF devices without Au nanoparticles did not. Moreover, Coulomb oscillations were observed at 4.2 K in MTNF-Au devices, indicating that Au nanoparticles embedded in MTNF-Au played a role of Coulomb islands. These results suggested that the enhanced photoconductance was ascribed to electron tunneling of hot electrons generated by the surface plasmon resonance.
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73.23.Hk Coulomb blockade; single-electron tunneling
73.63.Bd Nanocrystalline materials
73.22.-f Electronic structure of nanoscale materials and related systems
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
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