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Applied Physics Letters / Volume 96 / Issue 3 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 033111 (2010); http://dx.doi.org/10.1063/1.3293445 (3 pages)

Electronic structure of self-assembled InGaAs/GaAs quantum rings studied by capacitance-voltage spectroscopy

W. Lei1,2, C. Notthoff1, A. Lorke1, D. Reuter3, and A. D. Wieck3

1Fachbereich Physik and CeNIDE, Universität Duisburg-Essen, Lotharstr. 1, 47048 Duisburg, Germany
2Department of Electronic Materials Engineering, RSPE, Australian National University, Acton, Canberra ACT 0200, Australia
3Fakultät für Physik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum, Germany

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(Received 23 September 2009; accepted 22 December 2009; published online 22 January 2010)

Self-assembled InGaAs quantum rings, embedded in a GaAs matrix, were investigated using magneto-capacitance-voltage spectroscopy. The magnetic-field dispersion of the charging energies exhibits characteristic features for both the first and second electron, which can be attributed to a ground state transition from l = 0 into l = −1, and a ground state transition from l = −1 into l = −2, respectively. Furthermore, using a combination of capacitance-voltage spectroscopy and one-dimensional numerical simulations, the conduction band structure of these InGaAs quantum rings was determined.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

band structure, conduction bands, gallium arsenide, galvanomagnetic effects, ground states, III-V semiconductors, indium compounds, numerical analysis, self-assembly, semiconductor quantum dots

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3293445

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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