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18 Jan 2010

Volume 96, Issue 3, Articles (03xxxx)

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Appl. Phys. Lett. 96, 033101 (2010); http://dx.doi.org/10.1063/1.3291849 (3 pages)

Ferruccio Pisanello, Luigi Martiradonna, Godefroy Leménager, Piernicola Spinicelli, Angela Fiore, Liberato Manna, Jean-Pierre Hermier, Roberto Cingolani, Elisabeth Giacobino, Massimo De Vittorio, and Alberto Bramati
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Metal coated silicon spike cold-electron emitters show improvement of performance with operation

E. Spanakis, M. Barberoglou, V. Zorba, P. Tzanetakis, and C. Fotakis

Appl. Phys. Lett. 96, 033501 (2010); http://dx.doi.org/10.1063/1.3291672 (3 pages)

Online Publication Date: 19 January 2010

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The short lifetime of all field-emission cathodes in harsh vacuum conditions remains a serious hindrance to an attractive display technology. We studied the evolution in operation of cathodes with spikes, produced by femtosecond-laser self-driven structuring of silicon followed by coating with several different metal films. We observe a very promising behavior with gold and chromium only, opposite to that of all other coatings and of bare Si. This is the improvement in operation of the current-voltage characteristics of the cathode. Potential origins of this effect are briefly outlined.
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85.45.Db Field emitters and arrays, cold electron emitters
79.70.+q Field emission, ionization, evaporation, and desorption

Performance improvement of InAs/GaSb strained layer superlattice detectors by reducing surface leakage currents with SU-8 passivation

H. S. Kim (김하술), E. Plis, A. Khoshakhlagh, S. Myers, N. Gautam, Y. D. Sharma, L. R. Dawson, S. Krishna, S. J. Lee, and S. K. Noh

Appl. Phys. Lett. 96, 033502 (2010); http://dx.doi.org/10.1063/1.3275711 (3 pages) | Cited 14 times

Online Publication Date: 21 January 2010

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We report on SU-8 passivation for performance improvement of type-II InAs/GaSb strained layer superlattice detectors (λcut-off ∼ 4.6 μm). Optical and electrical behavior of SU-8 passivated and unpassivated devices was compared. The dark current density was improved by four orders of magnitude for passivated single diodes at 77 K. The zero bias responsivity and detectivity at 77 K was equal to 0.9 A/W and 3.5×1012 Jones for SU-8 passivated single pixel diodes. FPA size diodes (24×24 μm2) were also fabricated and they showed responsivity and detectivity of 1.3 A/W and 3.5×1012 Jones, respectively at 77 K.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
85.60.Bt Optoelectronic device characterization, design, and modeling
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
81.65.Rv Passivation
85.60.Dw Photodiodes; phototransistors; photoresistors
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