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18 Jan 2010

Volume 96, Issue 3, Articles (03xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 033101 (2010); http://dx.doi.org/10.1063/1.3291849 (3 pages)

Ferruccio Pisanello, Luigi Martiradonna, Godefroy Leménager, Piernicola Spinicelli, Angela Fiore, Liberato Manna, Jean-Pierre Hermier, Roberto Cingolani, Elisabeth Giacobino, Massimo De Vittorio, and Alberto Bramati
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Electronic band structure information of GdN extracted from x-ray absorption and emission spectroscopy

A. R. H. Preston, B. J. Ruck, W. R. L. Lambrecht, L. F. J. Piper, J. E. Downes, K. E. Smith, and H. J. Trodahl

Appl. Phys. Lett. 96, 032101 (2010); http://dx.doi.org/10.1063/1.3291057 (3 pages) | Cited 3 times

Online Publication Date: 19 January 2010

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The electronic structure of GdN films grown by pulsed laser deposition has been investigated by soft x-ray absorption (XAS) and x-ray emission spectroscopy (XES) at the N K-edge. Density functional calculations within the local spin density approximation with Hubbard-U corrections of the N p weighted bands and density of states are used to extract band information from the spectra. Gd M4,5 XAS and XES spectra are also presented. The XES-XAS separation is shown to give information on the f-band spin splitting and the XAS line shapes are shown to reflect atomic multiplet effects.
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78.70.Dm X-ray absorption spectra
71.20.-b Electron density of states and band structure of crystalline solids
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
71.10.Fd Lattice fermion models (Hubbard model, etc.)
81.15.Fg Pulsed laser ablation deposition

Strain-induced enhancement of electric quadrupole splitting in resistively detected nuclear magnetic resonance spectrum in quantum Hall systems

M. Kawamura, T. Yamashita, H. Takahashi, S. Masubuchi, Y. Hashimoto, S. Katsumoto, and T. Machida

Appl. Phys. Lett. 96, 032102 (2010); http://dx.doi.org/10.1063/1.3291618 (3 pages) | Cited 2 times

Online Publication Date: 19 January 2010

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We show electrical coherent manipulation of quadrupole-split nuclear spin states in a GaAs/AlGaAs heterostructure on the basis of the breakdown of quantum Hall effect. The electric quadrupole splitting in nuclear spin energy levels is intentionally enhanced by applying an external stress to the heterostructure. Nuclear magnetic resonance spectra with clearly separated triple peaks are obtained, and Rabi oscillations are observed between the nuclear spin energy levels. The decay of the spin-echo signal is compared between the cases before and after the enhancement of quadrupole splitting.
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76.60.Gv Quadrupole resonance
71.70.Jp Nuclear states and interactions
73.61.Ey III-V semiconductors
73.43.-f Quantum Hall effects

Electron trap memory characteristics of LiNbO3 film/AlGaN/GaN heterostructure

L. Z. Hao, J. Zhu, W. B. Luo, H. Z. Zeng, Y. R. Li, and Y. Zhang

Appl. Phys. Lett. 96, 032103 (2010); http://dx.doi.org/10.1063/1.3294308 (3 pages) | Cited 5 times

Online Publication Date: 19 January 2010

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LiNbO3 film (LNO)/AlGaN/GaN heterostructure was fabricated and its memory characteristics were studied. The heterostructure exhibited a wide range clockwise hysteresis (0.3–12.1 V) likely due to the electrons trapping and distrapping from the Li vacancies in the LNO film. After 10 years retention, 10% of the window could remain. In addition, a slight decrease for the memory window happened after 105 cycles. These results indicated that LNO film combined with AlGaN/GaN would hold promise for next-generation nonvolatile memory devices. Possible operating mechanism for the memory effect in the heterostructure was explained qualitatively by the energy band diagram.
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72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
61.72.jd Vacancies

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics

Takeshi Ota, Toshiaki Hayashi, Koji Muraki, and Toshimasa Fujisawa

Appl. Phys. Lett. 96, 032104 (2010); http://dx.doi.org/10.1063/1.3285180 (3 pages) | Cited 2 times

Online Publication Date: 19 January 2010

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We propose and demonstrate wide-band capacitance measurements on a semiconductor double quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby quantum-point-contact charge detector, we successfully measure current proportional to the capacitance associated with the single-electron motion over a wide frequency range from Hz to a few tens of GHz. Analyzing the phase and the frequency dependence of the signal allows us to extract the characteristic tunneling rates. We show that, by applying this technique to the interdot tunnel coupling regime, quantum capacitance reflecting the strength of the quantum-mechanical coupling can be measured.
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73.21.La Quantum dots
73.40.Gk Tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Surface passivation of n-type Czochralski silicon substrates by thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks

Yevgeniya Larionova, Verena Mertens, Nils-Peter Harder, and Rolf Brendel

Appl. Phys. Lett. 96, 032105 (2010); http://dx.doi.org/10.1063/1.3291681 (3 pages) | Cited 11 times

Online Publication Date: 19 January 2010

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The surface passivation properties of thermal-SiO2/plasma-enhanced chemical vapor deposition SiN stacks on 2.5 Ω cm n-type Czochralski silicon substrates have been investigated. By annealing these stacks in air we achieve surface recombination velocities (SRV) lower than 2.4 cm/s for thin SiO2 layers. We find a clear correlation between the thickness of the oxide layers and the annealing duration. We also show that the absolute passivation quality of the SiO2/SiN stacks correlates to the SiO2 thickness. We find that the SRV increases with increasing oxide thickness. We also present data of the surface passivation of these SiO2/SiN stacks after storage in the dark for several weeks.
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81.65.Rv Passivation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
73.25.+i Surface conductivity and carrier phenomena
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
81.40.Gh Other heat and thermomechanical treatments

Electrical properties of C-doped p-type GaP and GaPN grown by molecular beam epitaxy

Zhengxin Liu (劉正新), Hitoshi Kawanami (川浪仁志), and Isao Sakata (坂田功)

Appl. Phys. Lett. 96, 032106 (2010); http://dx.doi.org/10.1063/1.3291664 (3 pages) | Cited 1 time

Online Publication Date: 20 January 2010

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The electrical properties of C-doped p-type GaP and GaPN epilayers grown by molecular beam epitaxy using CBr4 as a doping source have been investigated. C is shown to be a relatively shallow acceptor both in GaP and GaPN, with the activation energy in the regions of 16–33 and 18–35 meV, respectively. GaP demonstrates ordinary conduction characteristics, whereas GaPN has a typical mixed conduction effect and the impurity conduction becomes dominant at low temperatures. It is conjectured that impurity conduction and ionized impurity scattering mechanisms in GaPN may be related to the inactivated C and N radicals.
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73.61.Ey III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
68.55.A- Nucleation and growth
61.72.S- Impurities in crystals
61.72.U- Doping and impurity implantation

Mo incorporation in WO3 thin film photoanodes: Tailoring the electronic structure for photoelectrochemical hydrogen production

M. Bär, L. Weinhardt, B. Marsen, B. Cole, N. Gaillard, E. Miller, and C. Heske

Appl. Phys. Lett. 96, 032107 (2010); http://dx.doi.org/10.1063/1.3291689 (3 pages) | Cited 6 times

Online Publication Date: 21 January 2010

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The electronic surface structure of Mo-incorporated WO3 (“WO3:Mo”) is investigated using direct and inverse photoemission and compared to that of pure (Mo-free) WO3. The films are found to be n-type with an electronic surface band gap of 3.27 (±0.15) eV. The conduction band minimum (valence band maximum) is 0.64 (±0.10) eV above [2.63 (±0.10) eV below] the Fermi level and at most 0.38 (±0.11) eV above the H+/H2 reduction potential [at least 1.66 (±0.11) eV below the H2O/O2 oxidation potential]. The findings suggest an explanation why WO3:Mo/WO3 bilayer structures show improved photoelectrochemical performance compared to respective single layer photoanodes.
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73.20.At Surface states, band structure, electron density of states
79.60.Bm Clean metal, semiconductor, and insulator surfaces
71.20.Ps Other inorganic compounds
82.50.-m Photochemistry
82.45.-h Electrochemistry and electrophoresis
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